Supercharge Your Innovation With Domain-Expert AI Agents!

Deep submicron CMOS bootstrap switch of eliminating substrate bias effect

A bootstrap switch, deep sub-micron technology, used in electronic switches, analog-to-digital converters, electrical components, etc., can solve problems such as poor linearity, achieve good linearity, eliminate offset effect, and high reliability. Effect

Inactive Publication Date: 2017-10-10
NO 24 RES INST OF CETC
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional bootstrap switch still has the problem of poor linearity due to design problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deep submicron CMOS bootstrap switch of eliminating substrate bias effect
  • Deep submicron CMOS bootstrap switch of eliminating substrate bias effect
  • Deep submicron CMOS bootstrap switch of eliminating substrate bias effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings; it should be understood that the preferred embodiments are only for illustrating the present invention, rather than limiting the protection scope of the present invention.

[0023] Such as figure 2 As shown, the clock signals CLK and CLKN are a pair of clock signals that are opposite to each other. In the holding phase, when the clock signal CLK is at low level, CLKN is at high level, NMOS transistor N3 is turned on, PMOS transistor P1 is turned off, the gate of NMOS transistor N1 is connected to the ground through NMOS transistor N2, NMOS transistor N1 is turned off, and the input The signal VIN is disconnected from the sampling capacitor C1, and the signal is held on the sampling capacitor.

[0024] In the holding phase, the gate of the PMOS transistor P2 is connected to the ground through the transistor N2, the transistor P2 is turned ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a deep submicron CMOS bootstrap switch of eliminating substrate bias effect. The deep submicron CMOS bootstrap switch of eliminating substrate bias effect includes NMOS transistors N1-N7, PMOS transistors P1-P4, a capacitor C1, a capacitor C2 and common nodes. The invention provides a bootstrap switch circuit, solving the problem that a traditional bootstrap switch has substrate bias effect, low reliability, low linear performance and narrow input signal range. The bootstrap switch circuit can be implemented in the deep submicron CMOS technological condition, and the input signal range can be changed between ground and power supply and even exceeds the power voltage range. The deep submicron CMOS bootstrap switch of eliminating substrate bias effect can eliminate the substrate bias effect and has high linearity. Special design enables the deep submicron CMOS bootstrap switch of eliminating substrate bias effect to have relatively higher reliability. The deep submicron CMOS bootstrap switch of eliminating substrate bias effect can be applied to a sampling hold circuit in an integrated analog digit converter.

Description

technical field [0001] The invention belongs to the field of analog / mixed-signal integrated circuits, and in particular relates to a deep submicron CMOS bootstrap switch for eliminating lining offset effects. Background technique [0002] Single MOS transistors are good switching devices and are widely used in digital integrated circuits. However, since the on-resistance of the MOS transistor varies with the input signal, it will cause nonlinear distortion when used to switch analog signals. Taking NMOS transistors as an example, the on-resistance of a single NMOS transistor can be written as [0003] [0004] In the above formula, k is a constant related to process parameters and transistor size, V gs Indicates the gate-source voltage difference of the NMOS transistor, V thn Indicates the threshold voltage of the NMOS transistor. Since the gate-source voltage difference of the NMOS transistor changes with the input signal, the on-resistance of the NMOS transistor als...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03K17/687H03M1/12
CPCH03K17/687H03M1/1245
Inventor 胡蓉彬王永禄张正平王健安陈光炳付东兵王育新蒋和全胡刚毅
Owner NO 24 RES INST OF CETC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com