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Improved quantum evolution algorithm-based broadband spectrum extreme ultraviolet multilayer film design method

A technology of quantum evolutionary algorithm and design method, applied in the field of EUV multilayer film, which can solve the problems of long time, low solution efficiency and low solution accuracy.

Active Publication Date: 2017-10-17
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of long time-consuming, low solution efficiency and low solution accuracy of the existing wide-spectrum extreme ultraviolet multilayer film design method, and provide a wide-spectrum extreme ultraviolet multilayer film design method based on an improved quantum evolution algorithm

Method used

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  • Improved quantum evolution algorithm-based broadband spectrum extreme ultraviolet multilayer film design method
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  • Improved quantum evolution algorithm-based broadband spectrum extreme ultraviolet multilayer film design method

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Embodiment 1

[0130] The four-layer model of Mo / Si multilayer film is used to design the theoretical film system. Since the diffusion between the Mo layer and the Si layer is weak, the diffusion layer MoSi 2 The thickness of the constant and the chemical properties are regarded as fixed, and the diffusion layer MoSi of the Mo layer on the Si layer is set 2 The thickness of the Si layer is 1.0nm, the diffusion layer MoSi on the Mo layer 2 The thickness is 0.5nm. Si, Mo, and MoSi 2 The densities of all adopt the ideal parameter values, and introduce the corresponding atomic scattering factor data from the literature (B.L.Henke, E.M.Gullikson, and J.C.Davis, At.DataNucl.Data Tables 54, (1993)) to calculate. During the design process, the Mo layer and The thickness of the Si layer is solved, and the film structure is detailed in figure 1 .

[0131] In this embodiment, the number of quantum population evolution times is 2000, the number of gene bits is 98, the mutation probability is 0.1, th...

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Abstract

The invention discloses an improved quantum evolution algorithm-based broadband spectrum extreme ultraviolet multilayer film design method, belongs to the technical field of extreme ultraviolet multilayer films, and aims at solving the problem that the existing design method is long in time and low in solution efficiency and solution precision. The design method comprises the following steps of: carrying out quantum coding on film systems, calculating fitness values of quantum chromosome individuals in a population by adoption of an evaluation function, and storing an optimum film system; judging whether the optimum film system satisfies an optimization criterion or not; if the judging result is positive, stopping the calculation and outputting a film system structure; and if the judging result is negative, carrying out single real number gene mutation on the individuals, judging whether the single real number gene mutation of the individuals is effective evolution or not, if the judging result is positive, updating a corresponding quantum probability amplitude by adoption of a quantum rotating gate, and updating the optimum multilayer film system by adoption of an elitism selection strategy until the evolution is completed. The design method is short in time and high in solution efficiency and solution precision.

Description

technical field [0001] The invention belongs to the technical field of extreme ultraviolet (EUV) multilayer films, in particular to a design method for a wide-spectrum extreme ultraviolet multilayer film based on an improved quantum evolution algorithm, and is especially suitable for wide-spectrum extreme ultraviolet multilayer films with high reflectivity the design of. Background technique [0002] Extreme ultraviolet generally refers to a special light band with a wavelength of several nanometers to tens of nanometers. There are a large number of atomic resonance lines and absorption lines in this band. Almost all materials have strong absorption and refraction of the radiation in this band. rate close to 1. Due to this strong absorption, it is very difficult to study extreme ultraviolet radiation. In 1972, E. Spiller proposed for the first time to alternately prepare a multilayer film structure of λ / 4 wave stacks by using high-refractive-index materials and low-refract...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50G06N3/12
CPCG06F30/20G06N3/123
Inventor 匡尚奇谢耀
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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