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Self-limiting silicon accurate etching method and special-purpose device thereof

A self-limiting and precise technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as three-dimensional (horizontal processing) that cannot be achieved, and achieve the effect of achieving accurate lateral etching and reducing equipment costs

Active Publication Date: 2017-11-07
JIANGSU LEUVEN INSTR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] 2) This method cannot achieve three-dimensional (transverse processing) due to the directionality of ion removal, which will be limited in the field of three-dimensional processing such as nanowire processing in the future

Method used

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  • Self-limiting silicon accurate etching method and special-purpose device thereof
  • Self-limiting silicon accurate etching method and special-purpose device thereof
  • Self-limiting silicon accurate etching method and special-purpose device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A method for self-limiting and precisely etching silicon, comprising the following steps:

[0037] 1) Formation of self-limiting oxide layer Si-Br on the Si surface;

[0038] 2) Removal of excess Br-based atmosphere;

[0039] 3) Transfer to high temperature platform to remove Si-HBr;

[0040] 4) Repeat steps 1)~3) to achieve precise control of the etching amount.

[0041] The special device is similar to ordinary semiconductor vacuum processing equipment, such as figure 1 As shown, there are also transfer modules (manipulators) and process modules. The difference is that there are two bases with different temperatures in the process module, which are low-temperature bases and high-temperature bases. The Br-based treatment on the surface of Si is carried out on the low-temperature base. (step 1), 2)), after completing the corresponding steps, it is transported by the robot to the high-temperature base to remove the SiBrx product (step 3)). Cycle through both pedesta...

Embodiment 3

[0054] On the basis of Embodiment 1, the hard mask is omitted, such as image 3 As shown, but the height compensation should be calculated in advance, and the expected nanoscale lines or columns can also be obtained, and precise nanoscale structures can be obtained without advanced photolithography.

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Abstract

The present invention discloses a self-limiting silicon accurate etching method and a special-purpose device thereof. The self-limiting silicon accurate etching method comprises the following steps of 1) forming a self-limiting oxide layer Si-Br on a silicon surface; 2) removing the redundant Br-base atmosphere; 3) transmitting to a high temperature bench to remove the Si-HBr; 4) repeating the steps 1) to 3), thereby accurately controlling the etching amount. The self-limiting silicon accurate etching method and the special-purpose device thereof have the self-limiting capability of an atomic layer level, also can realize the three-dimensional processing (the transverse and longitudinal processing), and do not have the high requirement for the device own control capability like the conventional technical scheme.

Description

technical field [0001] The invention belongs to the technical field of manufacturing semiconductor chips or nano-microstructures, and in particular relates to a method for self-limited and precise etching of silicon and a special device thereof. Background technique [0002] An integrated circuit (integrated circuit) is a tiny electronic device or component. Using a certain process, the transistors, resistors, capacitors, inductors and other components required in a circuit are interconnected, and they are fabricated on a small or several small semiconductor wafers or dielectric substrates, and then packaged in a tube. , and become a microstructure with required circuit functions; all the components in it have been structurally integrated, making electronic components a big step towards miniaturization, low power consumption, intelligence and high reliability. It is represented by the letter "IC" in the circuit. The inventors of the integrated circuit are Jack Kilby (germa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3213H01L21/67
CPCH01L21/32137H01L21/67011
Inventor 许开东
Owner JIANGSU LEUVEN INSTR CO LTD