A kind of polysilicon ingot casting furnace with diversion device

Abstract

The invention discloses a polycrystalline silicon ingot furnace with a diversion device. The ingot furnace comprises a heat insulation cage, a gas delivery pipe and a diversion device, wherein a plurality of diversion air ducts are formed in the diversion device, and are used for dividing input carrier gas into a plurality of outgoing carrier gas flows; the carrier gas flows inject different regions on the surface of liquid silicon in a dispersed and inclined manner, thus the contact area between carrier gas and the surface of liquid silicon is effectively increased, heat brought away by the carrier gas flows from the unit area is less, and temperature reduction of the liquid silicon in the regions can be reduced, condensate depression can be reduced, and impurity nucleation caused by the carrier gas and impurity formation can be reduced. The outgoing carrier gas flows can generate carrier gas stress on the liquid silicon, and drive the liquid silicon to flow and form a rotating flow field making peripheral flow; the rotating flow field is beneficial to transportation and uniform distribution of impurities in the liquid silicon; and an observation window in the furnace top has a view field leading to the inside of the ingot furnace through the diversion device, the state in the furnace can be observed through the observation window, a crystal measurement bar can be inserted into the furnace, an infrared detector can be used for detecting the state of a silicon material in the furnace, and the automatic crystal growing process can be carried out smoothly.

Description

[0001] This application is a divisional application of a patent application with the application number 201610082954.0, the application date is 2016-02-03, and the name is a polycrystalline silicon ingot furnace with a flow guiding device. technical field [0002] The invention relates to a polysilicon ingot furnace, in particular to a polysilicon ingot furnace with a diversion device for changing the direction of carrier gas, and belongs to the field of crystal growth equipment. Background technique [0003] The polycrystalline silicon ingot casting furnace is mainly composed of an infrared detector 90, a furnace body 11, a flow guiding device 12, a heat insulation cage 14, a heater 15, a heat exchange platform 16 and a graphite column 17, such as figure 1 As shown, the middle part of the end cover 113 on the furnace body 11 is provided with an observation window 114 . The heater 15 includes side heaters 151 and top heaters 152 on four sides. The flow guiding device 12 inc...

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Problems solved by technology

To overcome the problems existing in the prior art: the carrier gas is concentratedly blown to a certain area on the surface of the liquid silicon, without the driving force distributed in the circumferential direction, it is difficult to form a swirling flow field in the liquid silicon; and the carrier gas takes away a large amount of heat from this area , resulting in local overcooling of the liquid silicon in this area, which promotes the nucleation and growth of impurities in the liquid silicon; It is convenient for the operation of the furnace; the crystal measuring rod cannot be inserted into the ingot casting furnace through the diversion device, and the crystal growth rate is inconvenient to measure; the infrared detector cannot detect the state of the silicon material in the furnace through the observation window, and the automatic crystal growth process cannot be carried out normally

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