GaN HEMTs power device-to-diamond heat sink transfer method

Abstract

A GaN HEMTs power device-to-diamond heat sink transfer method disclosed by the present invention comprises the steps of growing a GaN HEMTs power device on a sapphire substrate, then adopting a Si wafer as a temporary supporting material to grow on the GaN HEMTs power device, and then separating the sapphire substrate from the GaN HEMTs power device, and adhering the Si wafer to the GaN HEMTs power device via a thermoplastic adhesive, and finally peeling the Si wafer on the GaN HEMTs power device, thereby obtaining the diamond heat sink wafer GaN HEMTs power device. By adopting the diamond of high thermal conductivity as a heat sink wafer of the GaN HEMTs power device, the heat radiation capability of the GaN HEMTs power device at the high-frequency and large-power application is improved substantially, and by adopting a low-temperature bonding method to adhere the heat radiation problem of the GaN HEMTs power device at the high-frequency and large-power application and the diamond heat sink wafer, the damage of the conventional high-temperature bonding to the performances of the device is avoided effectively. The transfer method of the present invention is simple in technology and good in repeatability, and is easy to realize.

Description

technical field [0001] The invention relates to the technical field of heat dissipation of GaN HEMTs power devices, in particular to a method for transferring GaN HEMTs power devices to diamond heat sinks. Background technique [0002] As a typical power semiconductor device, GaN HEMTs have the advantages of high voltage resistance, high current, high power, and high temperature resistance, and are a very promising power electronic device. However, as the output power of the device continues to increase, the heat generated by the device will increase sharply. If the heat is not dissipated in time, the high temperature generated by the heat inside the device will seriously affect the performance of the device. Therefore, heat dissipation has become an urgent issue in the design and manufacture of GaN HEMTs power devices. [0003] The traditional solution to the heat dissipation of GaN HEMTs power devices is to prepare the device on a sapphire or SiC substrate and use the sap...

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Problems solved by technology

[0003] The traditional solution to the heat dissipation of GaN HEMTs power devices is to prepare the device on a sapphire or SiC substrate and use the sapphire or SiC substrate to dissipate heat. However, sapphire and SiC have limited thermal conductivity (sapphire thermal conductivity 35W / m K, SiC The thermal conductivity of 490W / m K) is difficult to meet the heat dissipation requirements of high-frequency and high-power applications, because the preparation of large-scale high-quality diamond single crystal substrates is very difficult, and because there is a large lattice between GaN and diamond Mismatch and thermal mismatch, the epitaxial growth temperature is usually above 1000°C, it is very difficult to carry out GaN heteroepitaxy on a diamond substrate, and it is difficult for diamond materials to form a high-performance heterostructure

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