Method for increasing plane target utilization rate in magnetron sputtering coating process
A magnetron sputtering coating and planar target technology, which is applied in the field of magnetron sputtering coating, can solve the problems of waste of planar target materials and high film manufacturing costs, etc., and achieve increased etching area, increased electronic activity, and electronic Effect of exercise zone improvement
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[0028] Example 1:
[0029] Such as Figure 5 with Image 6 As shown, the two rows of magnets are rotated 45° toward the middle of the planar target 2 respectively, so that the N-pole magnetic pole surface 301 of one row of magnets and the S-pole magnetic pole surface 401 of the other row of magnets are 45 degrees with the first surface 201 of the planar target 2 respectively. ° Angle tilt. This arrangement of magnets enhances the magnetic induction intensity of the use area of the plane target 2 compared to the prior art. The electron activity in the sputtering area is increased. The large amount of electron movement area 5 is about a 50° arc range, and the plane target 2 etches the area. 6 is about a 50° arc range, the etching area 6 is enlarged, and the utilization rate of the planar target 2 is about 35%-40%, which is 40%-60% higher than the utilization rate of the planar target 2 in the prior art.
Example Embodiment
[0030] Example 2:
[0031] Rotate the two rows of magnets toward the middle of the planar target 2 by 5°, so that the N-pole magnetic pole surface 301 of one row of magnets and the S-pole magnetic pole surface 401 of the other row of magnets are inclined at an angle of 5° to the first surface 201 of the planar target 2 respectively. . With this arrangement of magnets, a large amount of electron movement area 5 is about 41° arc range, plane target 2 sputter etching area 6 is about 41° arc range, and the utilization rate of plane target 2 is about 26%. The flat target 2 in the prior art has increased by 4%.
Example Embodiment
[0032] Example 3:
[0033] Rotate the two rows of magnets toward the center of the planar target 2 by 60°, so that the N-pole magnetic pole surface 301 of one row of magnets and the S-pole magnetic pole surface 401 of the other row of magnets are inclined at an angle of 60° to the first surface 201 of the planar target 2 respectively. . This kind of arrangement of magnets makes a large amount of electron movement area 5 about 42° arc range, plane target 2 sputtering etching area 6 about 42° arc range, and the utilization rate of plane target 2 is about 28%. In the prior art, the utilization rate of the planar target 2 is increased by 12%.
[0034] By changing the arrangement structure of the magnet relative to the planar target 2 to change the magnetic field distribution, the magnetic induction intensity of the magnetic field passing through the use area of the planar target 2 is enhanced, the electron activity in the sputtering area is increased, and a large number of electron ...
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