Method for increasing plane target utilization rate in magnetron sputtering coating process

A magnetron sputtering coating and planar target technology, which is applied in the field of magnetron sputtering coating, can solve the problems of waste of planar target materials and high film manufacturing costs, etc., and achieve increased etching area, increased electronic activity, and electronic Effect of exercise zone improvement

Inactive Publication Date: 2017-11-28
吴江南玻华东工程玻璃有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This results in a waste of planar target materia

Method used

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  • Method for increasing plane target utilization rate in magnetron sputtering coating process
  • Method for increasing plane target utilization rate in magnetron sputtering coating process
  • Method for increasing plane target utilization rate in magnetron sputtering coating process

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0028] Example 1:

[0029] Such as Figure 5 with Image 6 As shown, the two rows of magnets are rotated 45° toward the middle of the planar target 2 respectively, so that the N-pole magnetic pole surface 301 of one row of magnets and the S-pole magnetic pole surface 401 of the other row of magnets are 45 degrees with the first surface 201 of the planar target 2 respectively. ° Angle tilt. This arrangement of magnets enhances the magnetic induction intensity of the use area of ​​the plane target 2 compared to the prior art. The electron activity in the sputtering area is increased. The large amount of electron movement area 5 is about a 50° arc range, and the plane target 2 etches the area. 6 is about a 50° arc range, the etching area 6 is enlarged, and the utilization rate of the planar target 2 is about 35%-40%, which is 40%-60% higher than the utilization rate of the planar target 2 in the prior art.

Example Embodiment

[0030] Example 2:

[0031] Rotate the two rows of magnets toward the middle of the planar target 2 by 5°, so that the N-pole magnetic pole surface 301 of one row of magnets and the S-pole magnetic pole surface 401 of the other row of magnets are inclined at an angle of 5° to the first surface 201 of the planar target 2 respectively. . With this arrangement of magnets, a large amount of electron movement area 5 is about 41° arc range, plane target 2 sputter etching area 6 is about 41° arc range, and the utilization rate of plane target 2 is about 26%. The flat target 2 in the prior art has increased by 4%.

Example Embodiment

[0032] Example 3:

[0033] Rotate the two rows of magnets toward the center of the planar target 2 by 60°, so that the N-pole magnetic pole surface 301 of one row of magnets and the S-pole magnetic pole surface 401 of the other row of magnets are inclined at an angle of 60° to the first surface 201 of the planar target 2 respectively. . This kind of arrangement of magnets makes a large amount of electron movement area 5 about 42° arc range, plane target 2 sputtering etching area 6 about 42° arc range, and the utilization rate of plane target 2 is about 28%. In the prior art, the utilization rate of the planar target 2 is increased by 12%.

[0034] By changing the arrangement structure of the magnet relative to the planar target 2 to change the magnetic field distribution, the magnetic induction intensity of the magnetic field passing through the use area of ​​the planar target 2 is enhanced, the electron activity in the sputtering area is increased, and a large number of electron ...

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Abstract

The invention relates to a method for increasing a plane target utilization rate in a magnetron sputtering coating process. The magnetron sputtering coating equipment at least comprises a plane target and a pair of magnet groups which are NS poles of each other and are arranged on the same side of the plane target, wherein the magnet groups comprise a first magnet and a second magnet; the first magnet has an N pole magnetic pole surface oriented to the plane target; the plane target is positioned in a magnetic field area formed in the magnet groups; and the N pole magnetic pole surface of the first magnet and an S pole magnetic pole surface of the second magnet are respectively inclined to the middle of the first surface. According to the magnetron sputtering coating equipment disclosed by the invention, the magnetic field distribution is changed by changing an arrangement structure of the magnet groups relative to the plane target, so that the magnetic induction intensity of the magnetic field passing a plane target using area is enhanced, and the electron activity in the sputtering area is improved; and due to the increase of lots of electron motion areas, the etching area is enlarged, so that the plane target utilization rate is greatly improved compared with that in the prior art, and the plane target using cost is reduced.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering coating, in particular to a method for improving the utilization rate of a plane target in the process of magnetron sputtering coating. Background technique [0002] Magnetron sputtering coating is a coating technology that bombards a solid target with charged particles to sputter out the target atoms and deposit them on the surface of the substrate to form a thin film. Under the action of the electric field E, the electrons collide with the argon atoms in the process of flying to the substrate, so that they are ionized to generate Ar positive ions and new electrons. The new electrons fly to the substrate, and the Ar positive ions are accelerated to fly to the cathode under the action of the electric field. The target is bombarded with high energy to sputter the target. In sputtering particles, neutral target atoms or molecules are not affected by electric and magnetic fields, so the...

Claims

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Application Information

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IPC IPC(8): C23C14/35
CPCC23C14/35
Inventor 宋保柱王栋权王梅
Owner 吴江南玻华东工程玻璃有限公司
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