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Method for increasing plane target utilization rate in magnetron sputtering coating process

A magnetron sputtering coating and planar target technology, which is applied in the field of magnetron sputtering coating, can solve the problems of waste of planar target materials and high film manufacturing costs, etc., and achieve increased etching area, increased electronic activity, and electronic Effect of exercise zone improvement

Inactive Publication Date: 2017-11-28
吴江南玻华东工程玻璃有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This results in a waste of planar target material, making the manufacturing cost of the film high

Method used

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  • Method for increasing plane target utilization rate in magnetron sputtering coating process
  • Method for increasing plane target utilization rate in magnetron sputtering coating process
  • Method for increasing plane target utilization rate in magnetron sputtering coating process

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Experimental program
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Effect test

Embodiment 1

[0029] Such as Figure 5 and Figure 6 As shown, the two rows of magnets are rotated 45° towards the middle of the planar target 2, so that the N-pole magnetic pole surface 301 of one row of magnets and the S-pole magnetic pole surface 401 of the other row of magnets are respectively 45° from the first surface 201 of the planar target 2. ° angle tilt. This arrangement of magnets makes the magnetic induction intensity of the use area of ​​the planar target 2 stronger than that of the prior art, and the electron activity in the sputtering area increases, and the movement area 5 of a large number of electrons is about a 50° arc range, and the etching area of ​​the planar target 2 6 is about a 50° arc range, the etching area 6 increases, and the utilization rate of the planar target 2 is about 35%-40%, which is 40%-60% higher than the utilization rate of the planar target 2 in the prior art.

Embodiment 2

[0031] Rotate the two rows of magnets towards the middle of the planar target 2 by 5°, so that the N-pole magnetic pole surface 301 of one row of magnets and the S-pole magnetic pole surface 401 of the other row of magnets are respectively inclined at an angle of 5° to the first surface 201 of the planar target 2 . This arrangement of magnets makes a large number of electron movement areas 5 about 41 ° arc range, planar target 2 sputter etching area 6 is about 41 ° arc range, planar target 2 utilization rate is about 26%, relative to The improvement of planar target 2 in the prior art is 4%.

Embodiment 3

[0033] Rotate the two rows of magnets towards the middle of the planar target 2 by 60°, so that the N-pole magnetic pole surface 301 of one row of magnets and the S-pole magnetic pole surface 401 of the other row of magnets are respectively inclined at an angle of 60° to the first surface 201 of the planar target 2 . This arrangement of magnets makes a large number of electron movement areas 5 about 42° arc range, planar target 2 sputtering etching area 6 is about 42° arc range, planar target 2 utilization rate is about 28%, relatively Compared with the prior art, the utilization rate of the planar target 2 has increased by 12%.

[0034]By changing the arrangement structure of the magnet relative to the planar target 2, the distribution of the magnetic field is changed, so that the magnetic induction intensity of the magnetic field passing through the use area of ​​the planar target 2 is enhanced, the activity of electrons in the sputtering area is increased, and the movement ...

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Abstract

The invention relates to a method for increasing a plane target utilization rate in a magnetron sputtering coating process. The magnetron sputtering coating equipment at least comprises a plane target and a pair of magnet groups which are NS poles of each other and are arranged on the same side of the plane target, wherein the magnet groups comprise a first magnet and a second magnet; the first magnet has an N pole magnetic pole surface oriented to the plane target; the plane target is positioned in a magnetic field area formed in the magnet groups; and the N pole magnetic pole surface of the first magnet and an S pole magnetic pole surface of the second magnet are respectively inclined to the middle of the first surface. According to the magnetron sputtering coating equipment disclosed by the invention, the magnetic field distribution is changed by changing an arrangement structure of the magnet groups relative to the plane target, so that the magnetic induction intensity of the magnetic field passing a plane target using area is enhanced, and the electron activity in the sputtering area is improved; and due to the increase of lots of electron motion areas, the etching area is enlarged, so that the plane target utilization rate is greatly improved compared with that in the prior art, and the plane target using cost is reduced.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering coating, in particular to a method for improving the utilization rate of a plane target in the process of magnetron sputtering coating. Background technique [0002] Magnetron sputtering coating is a coating technology that bombards a solid target with charged particles to sputter out the target atoms and deposit them on the surface of the substrate to form a thin film. Under the action of the electric field E, the electrons collide with the argon atoms in the process of flying to the substrate, so that they are ionized to generate Ar positive ions and new electrons. The new electrons fly to the substrate, and the Ar positive ions are accelerated to fly to the cathode under the action of the electric field. The target is bombarded with high energy to sputter the target. In sputtering particles, neutral target atoms or molecules are not affected by electric and magnetic fields, so the...

Claims

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Application Information

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IPC IPC(8): C23C14/35
CPCC23C14/35
Inventor 宋保柱王栋权王梅
Owner 吴江南玻华东工程玻璃有限公司
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