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Photoelectric conversion device and image reading device

A technology of photoelectric conversion devices and photoelectric conversion elements, which can be used in image communication, photovoltaic power generation, radiation control devices, etc., and can solve the problem of increased light receiving area

Active Publication Date: 2022-01-28
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve the sensitivity, in Fig. 1 of Japanese Patent Laid-Open No. 2004-312039, a photoelectric conversion device including a large charge collecting area, so that the charge collection efficiency can be improved to solve the disadvantage of increasing the size of the light-receiving area

Method used

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  • Photoelectric conversion device and image reading device
  • Photoelectric conversion device and image reading device
  • Photoelectric conversion device and image reading device

Examples

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no. 1 example

[0043] Figure 1A and figure 2 is a plan view of a part of the photoelectric conversion device 100 according to the first embodiment. Figure 1B and Figure 1C respectively along the Figure 1A Schematic cross-sectional views taken along lines IB to IB and IC to IC. Figure 3A to Figure 3D respectively along the figure 2 Schematic cross-sectional views taken along lines IIIA to IIIA, IIIB to IIIB, IIIC to IIIC and IIID to IIID of . Figure 4 is a schematic plan view of a part of the photoelectric conversion device 100 according to this embodiment. Figure 5 is a circuit diagram of a part of the photoelectric conversion device 100 according to this embodiment, and Figure 6 is a schematic cross-sectional view of one of the recessed portions of the photoelectric conversion device 100 according to this embodiment. Figure 7A and Figure 7B is a plan view of part of the photoelectric conversion device 100 according to this embodiment, and Figure 8A and Figure 8B is a p...

no. 2 example

[0100] Figure 9 is a plan view schematically showing the photoelectric conversion device 100 according to the second embodiment. Using 3A to Figure 3D The cross-sectional view shown in . Portions having the same functions as in the first embodiment are denoted by the same reference numerals as in the first embodiment, and detailed descriptions thereof are omitted.

[0101] The photoelectric conversion device 100 according to this embodiment includes a section 207 including a signal charge path arranged between a plurality of recessed portions 106 and extending in the X direction, and a section 208 including a section arranged in A signal charge path between the plurality of recessed portions 106 and extending in the Y direction. In addition to the section 207 and the section 208, the photoelectric conversion device 100 of this embodiment further includes a section 209 having a section 209 arranged between the plurality of recessed portions 106 and extending in a direction...

no. 3 example

[0106] Figure 10 is a plan view schematically showing a part of the photoelectric conversion device 100 according to the third embodiment. remove Figure 3A and Figure 3C Each of the recessed portions 106 is represented by a plurality of recessed portions 606, using the same Figure 3A to Figure 3D The same cross-sectional view in . Portions having the same functions and configurations as those in the first embodiment are denoted by the same reference numerals as in the first embodiment, and detailed descriptions thereof are omitted.

[0107] In the photoelectric conversion device 100 of this embodiment, the region 506 corresponding to each of the depressed portions 106 is formed not by one depressed portion but by a plurality of depressed portions 606 . In this embodiment, for example, in a plan view of the main surface having the depressed portions 606 on the semiconductor substrate 400, for example, the plurality of depressed portions 606 may have a length equal to or...

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Abstract

A photoelectric conversion device and an image reading device are proposed. A photoelectric conversion device includes a semiconductor substrate having one main surface including a recessed portion, and an insulator in the recessed portion. The semiconductor substrate includes photoelectric conversion elements, each of which includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of a second conductivity type, wherein the third semiconductor region has an opposite At least a portion of the second semiconductor region is disposed closer to the main surface. The second semiconductor region has the polarity of the signal charge. The second semiconductor region is in contact with the first and third semiconductor regions. In a cross section perpendicular to the main surface, signal charge paths are disposed between the recessed portions. At least one of the second and third semiconductor regions is oriented in the direction of at least two of the signal charge paths.

Description

technical field [0001] The present invention relates to a photoelectric conversion device and an image reading device. Background technique [0002] A photoelectric conversion device in which a photodiode formed of a PN junction of first and second conductivity type semiconductor regions is used as a photoelectric conversion element, and an image reading device using such a photoelectric conversion device have been used. In general, image reading devices require high sensitivity and high image quality. In order to improve the sensitivity, in Fig. 1 of Japanese Patent Laid-Open No. 2004-312039, a photoelectric conversion device including a large charge collecting area, so that the charge collection efficiency can be improved to solve the disadvantage of increasing the size of the light-receiving area. Furthermore, it is disclosed in Japanese Patent Laid-Open No. 2011-124522 that a local oxidation of silicon (LOCOS) region is provided on one main surface of the photoelectric...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H04N1/028
CPCH01L27/1463H01L27/14643H04N1/028H01L27/14605H04N1/02805Y02E10/50H01L31/08H01L31/06H01L31/04H01L27/1461H01L27/146
Inventor 铃木达也小泉彻小仓正徳铃木隆典伊庭润
Owner CANON KK