Sensitive Amplifier Circuit

Abstract

The invention provides a sense amplifier circuit. The sense amplifier circuit is connected with a bit line unit of a memory circuit. The sense amplifier circuit comprises a clamping unit, a pre-charge unit, a current mirror unit and a comparison unit, wherein the pre-charge unit charges the clamping unit so that the clamping unit can form a bit line current; the current mirror unit provides a reference current; the bit line current and the reference current are compared to form a data point voltage; the data point voltage is input into the comparison unit and compared with a reference voltage so that the comparison unit can output a data reading result; the clamping unit comprises a transistor module, an inverter module and a mode switching module; and the mode switching module controls connection of the transistor module and the inverter module according to an amplitude of a supply voltage so as to control the forming speed of the bit line current, and therefore switching between low-voltage slow reading and high-voltage quick reading is realized.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a sense amplifier circuit. Background technique [0002] The sense amplifier senses small signal changes on the bit line and amplifies the small signal changes to obtain the data stored on the memory cell. Before sensing small signal changes on the bit line, the clamp unit of the sense amplifier will adjust the bit line voltage to a fixed value, so that the bit line voltage can be stabilized as soon as possible, and then a stable bit line current can be sensed during reading. [0003] The low-power design of the memory is favored in the fields of bank cards, microprocessors, etc., where the power consumption of the system can be reduced by reducing the power supply voltage, but the reduction of the power supply voltage will lead to a decrease in the reading speed. The sense amplifier circuit is used as one of the memory An important component that directly affects the read speed ...

AI Technical Summary

Problems solved by technology

[0003] The low power consumption design of the memory is favored in the fields of bank cards, microprocessors, etc., where the power consumption of the system can be reduced by reducing the power supply voltage, but the reduction of the power supply voltage will lead to a reduction in the reading speed, and the sense amplifier circuit is used as one of the memory An important component that directly affects the read speed of the memory

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