Laser annealing equipment and laser annealing method

Abstract

The invention discloses laser annealing equipment and a laser annealing method and belongs to the technical field of display. The laser annealing equipment comprises a linear laser and a light cutter arranged in a light outlet direction of the linear laser, wherein the light cutter comprises a plate-shaped body; the plate-shaped body is provided with a hollow area limited by at least two edges; two edges of the hollow area are gradually close to each other along a default direction; and the length direction of a linear light spot of the linear laser on a default irradiation surface is not parallel to the default direction. When the light cutter and the linear laser relatively move along the default direction, the length of the light spot of the linear laser can be adjusted; and when an amorphous silicon layer is irradiated, the whole amorphous silicon layer can be transformed into a polysilicon layer through adjusting the length of the light spot, so that the problem that the transformation ratio of the polysilicon layer is affected due to the fact that one part of amorphous silicon layer is not transformed into the polysilicon layer in related technologies is solved, thereby achieving the effect of improving the transformation ratio of the polysilicon layer.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a laser annealing device and a laser annealing method. Background technique [0002] Laser annealing (English: laser annealing) equipment usually includes a line laser (that is, a laser that emits a laser with a linear spot on the irradiation surface) and a light cutter (English: beam) for limiting the spot length of the line laser. cutter). Currently, laser annealing equipment is widely used in the process of forming polysilicon. [0003] In the related art, when polysilicon is formed, a rectangular amorphous silicon layer is formed in a predetermined area of ​​the base, and a light cutter is arranged between the amorphous silicon layer and the linear laser, and a strip-shaped hollow area is arranged on the light cutter. The length of the strip hollow area is shorter than the length of the linear spot of the linear laser. When the laser emitted by the line laser irradiates t...

AI Technical Summary

Problems solved by technology

[0004] In the process of realizing the present invention, the inventors found that there are at least the following problems in related technologies: in order to avoid damage to the base platform by laser irradiation, the scanning area of ​​the linear spot on the amorphous silicon layer is difficult to completely cover the amorphous silicon layer. layer, which in turn causes part of the amorphous silicon layer not to be transformed into a polysilicon layer, which affects the transformation ratio of the polysilicon layer

Images