Schottky base structure, schottky diode and manufacturing method therefor

Abstract

The invention provides a schottky base structure. The schottky base structure comprises an N type semiconductor layer, a first P type semiconductor layer which covers the N type semiconductor layer, and a first N type semiconductor layer or a semi-insulating type semiconductor layer which covers the first P type semiconductor layer. By virtue of the schottky base structure provided by the embodiment, the reverse voltage withstand value of the diode can be improved effectively, and reliability of the diode is effectively improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor devices, in particular to a Schottky structure, a Schottky diode and a manufacturing method. Background technique [0002] Schottky diodes are diodes that use metal and N-type semiconductor contacts to form a barrier at the interface. Since the Schottky diode does not have the process of accumulation and dissipation of minority carriers near the PN junction, the capacitive effect is very small and the working speed is very fast, which is especially suitable for high frequency or switching state applications. [0003] However, due to the thinner depletion region of the Schottky diode, the reverse breakdown voltage is lower. In the prior art, when the Schottky diode is connected to the reverse voltage, an edge termination effect usually occurs at the edge of the connection between the anode metal and the N-type semiconductor, resulting in the accumulation of a large amount of posi...

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Problems solved by technology

[0003] However, due to the thinner depletion region of the Schottky diode, the reverse breakdown voltage is relatively low

In the prior art, when the Schottky diode is connected to the reverse voltage, an edge termination effect usually occurs at the edge of the connection between the anode metal and the N-type semiconductor, resulting in the accumulation of a large amount of positive charges at the connection between the N-type semiconductor and the edge of the anode metal , to generate an electric field in the same direction as the electric field generated by the reverse voltage, resulting in an increase in the reverse voltage value borne by the barrier region, and reverse breakdown of the Schottky diode

This is equivalent to indirectly reducing the reverse withstand voltage value of the Schottky diode, reducing the reliability of the Schottky diode, and affecting the normal operation of the circuit where the Schottky diode is located.

[0004] There are at least the following problems in the prior art: in the reverse connection state of the existing Schottky diodes, due to the edge termination effect between the anode metal and the N-type semiconductor, a large number of positive diodes are gathered at the junction of the N-type semiconductor and the edge of the anode metal. Charge, the accumulated positive charges will generate an electric field in the same direction as the electric field generated by the reverse voltage, resulting in an increase in the reverse voltage value borne by the barrier region, and reverse breakdown of the Schottky diode

This leads to an indirect reduction of the reverse withstand voltage value of the Schottky diode and reduces the reliability of the Schottky diode.

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