Fabrication method of semiconductor device

Abstract

The present invention provides a fabrication method of a semiconductor device. The fabrication method comprises the following steps that: a semiconductor wafer is provided, an interlayer dielectric layer is deposited on the semiconductor wafer, and a trench forming an interconnection structure is formed in the interlayer dielectric layer; a first wafer bevel treatment process is performed to remove a portion of the interlayer dielectric layer in a wafer bevel region; and the trench is filled to form the interconnection structure. With the fabrication method adopted, the problem of the low yield of the device caused by the unevenness of the film layer of a wafer bevel can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] In the field of semiconductor technology, in the manufacturing process of semiconductor devices, it is often necessary to use many materials such as polysilicon layers, metal interconnection layers, and low dielectric material layers to form required semiconductor devices. However, the film layer deposited on the wafer often has the problem of uneven thickness or uneven surface level. This problem of uneven film thickness is especially obvious near the wafer bevel, which often leads to the excessive thickness of the wafer near the wafer bevel, which will cause defects (defects) and shocks of semiconductor devices (especially dies at the edge of the wafer). Problems such as arcing and excessive stress ultimately affect the yield of semiconductor devices manufactured. [0003] For example, aft...

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Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention proposes a method for manufacturing a semiconductor device, which can overcome the problem of device yield caused by uneven film layers at crystal edges

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