Exposure dose uniformity by rotation, translation and variable process conditions

Abstract

The substrate may be disposed on a substrate support in a wafer exposure processing system. Exposure dose distribution over the entire film can be selected. The substrate can be exposed to flood radiation from the source, and flood irradiation can be terminated when a selected exposure dose profile is achieved. Exposing the substrate to flood radiation can include controlling the substrate rotation rate, source scan rate, substrate scan rate, source power settings, distance from source to substrate, source aperture settings, angle of incidence of flood radiation on the substrate, and source At least one of the focal positions to achieve the selected exposure dose distribution across the entire film.

Description

[0001] Cross References to Related Applications [0002] This disclosure claims U.S. Provisional Application No. 62 / 141,003, filed March 31, 2015, entitled "High Power UV Flood Exposure Dose Homogenization by Combination of Rotation, Translation and Variable Processing Conditions," and filed July 16, 2015 Priority to US Nonprovisional Patent Application Serial No. 14 / 801,703, entitled "Exposure dose homogenization through rotation, translation, and variable processing conditions," the entire contents of which are incorporated herein by reference. Background technique [0003] Substrate processing generally involves exposing the substrate wafer to radiation. For example, the substrate can be exposed to ultraviolet (UV) light, including high power UV radiation. The substrate may be exposed to high power light (eg UV light), for example, during a photolithography process and / or other fabrication processes. Exposing the entire substrate to a light source of substantially uniform...

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However, light bars may have significant intensity falloff

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