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Semiconductor device and method for manufacturing same

A technology for semiconductors and devices, applied in the field of semiconductor devices with overlay margins and their manufacturing, can solve problems such as reducing overlay margins

Inactive Publication Date: 2018-01-19
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, as semiconductor devices are highly integrated, cell sizes are gradually reduced, semiconductor devices are gradually increased in height, and critical dimensions (CD) are gradually reduced, resulting in a reduction in overlay margins between contacts and metal lines

Method used

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  • Semiconductor device and method for manufacturing same
  • Semiconductor device and method for manufacturing same
  • Semiconductor device and method for manufacturing same

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Embodiment Construction

[0018] Reference will now be made in detail to certain embodiments of the invention taken in conjunction with the accompanying drawings. However, this disclosure may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided as examples so that this disclosure will be thorough and complete, and will fully convey the various aspects and features of the invention to those skilled in the art.

[0019] Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. In the following description, detailed descriptions of related known configurations or functions incorporated herein may be omitted so as not to obscure the subject matter of the present invention.

[0020] It will be understood that although the terms "first," "second," and "third," etc. may be used herein to describe various elements, these elements should not be limited by the...

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PUM

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Abstract

A semiconductor device and a method for manufacturing the same are disclosed, which guarantee an overlay margin between a contact and a metal line. A method for manufacturing a semiconductor device includes: forming a stacked insulation film in which a first interlayer insulation film, an etch stop film, and a second interlayer insulation film are sequentially stacked, over a lower structure; forming a contact hole by etching the stacked insulation film; forming a contact by burying a conductive film in the first interlayer insulation film and the etch stop film within the contact hole; and forming a metal line coupled to a top surface of the contact.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2016-0087512 filed with the Korean Intellectual Property Office on Jul. 11, 2016, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] Embodiments of the present disclosure relate to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device having an overlay margin between a contact and a metal line and a method of manufacturing the same. Background technique [0004] Typically, semiconductor devices include metal lines for electrical interconnection between devices or between lines. In addition, the semiconductor device also includes contacts for interconnection between the upper metal line and the lower metal line. [0005] Metal wires are generally formed of aluminum (Al) and / or tungsten (W) which have superconductivity. Recently, many develop...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L23/53223H01L23/53266H01L23/53295H01L21/76808H01L21/76844H01L21/76804H01L23/5226H01L23/53238H01L21/76807H01L21/76838H01L21/76829H01L21/76877H01L21/76897H01L21/76888H01L21/76856H01L2924/01074H01L2924/01029H01L21/76843H01L23/528H01L23/5329
Inventor 金锺勋
Owner SK HYNIX INC