High-isolation large-scale array synthesis power amplifier

A power amplifier and array synthesis technology, which is applied in the directions of amplifiers, waveguide-type devices, and electrical components with distributed constants in the coupling network. It can solve the problems of small internal space, small number of array elements, limited number of antennas and chips, etc. The effect of working bandwidth, reducing overall space, and saving synthesis space

Active Publication Date: 2018-01-23
GUANGZHOU STARWAY COMM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limited width of the waveguide cavity, the number of antennas and chips that can be accommodated on each card is limited
The problem of this structure is more prominent in the millimeter-wave band with high frequency, because the internal space is small, and the space after parallel superposition is too small to place microwave chips.
This results in a very small number of array units, and cannot form a large-scale synthetic array.

Method used

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  • High-isolation large-scale array synthesis power amplifier
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  • High-isolation large-scale array synthesis power amplifier

Examples

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specific Embodiment 1

[0026] refer to Figure 1 ~ Figure 3 , a high-isolation large-scale array synthesis power amplifier, including a base 1 and a waveguide cavity 2 formed by the base 1, a plurality of stacked cards are arranged in the waveguide cavity 2, and the card includes an antenna circuit board 3 and is arranged on the antenna circuit Two amplifier chips 4 on the board 3, at least one antenna is arranged on the antenna circuit board 3, the input end and the output end of each amplifier chip 4 are respectively connected with the input end and the output end of an antenna to form an amplification channel, and Each amplifying channel is set in an isolation chamber inside the waveguide cavity 2 .

[0027] The waveguide cavity 2 is a structure with a large central part and slender sides. Since the central cavity is too large, if there is no isolation between the two amplification channels, high-order modes will be generated. Therefore, if figure 2 As shown, among the stacked cards in this em...

specific Embodiment 2

[0035] refer to figure 1, a high-isolation large-scale array synthesis power amplifier, including a base 1 and a waveguide cavity 2 formed by the base 1, a plurality of stacked cards are arranged in the waveguide cavity 2, and the card includes an antenna circuit board 3 and is arranged on the antenna circuit Two amplifier chips 4 on the board 3, at least one antenna is arranged on the antenna circuit board 3, the input end and the output end of each amplifier chip 4 are respectively connected with the input end and the output end of an antenna to form an amplification channel, and Each amplifying channel is set in an isolation chamber inside the waveguide cavity 2 .

[0036] The waveguide cavity 2 is a structure with a large central part and slender sides. Since the central cavity is too large, if there is no isolation between the two amplification channels, high-order modes will be generated. In this embodiment, the antenna circuit board 3 is placed on the front of the card...

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Abstract

The invention discloses a high-isolation large-scale array synthesis power amplifier, which comprises a base and a waveguide cavity formed by the base, wherein multiple stacked cards are arranged in the waveguide cavity; each card comprises an antenna circuit board and at least one amplifier chip arranged on the antenna circuit board; at least one antenna is arranged on the antenna circuit board;the input end and the output end of each amplifier chip are connected with the input end and the output end of one antenna, and an amplification channel is formed; and each amplification channel is arranged in an isolation cavity arranged in the waveguide cavity. The synthesis space can be saved; in a condition of realizing large-scale array synthesis, the overall space of the synthesis power amplifier can be greatly reduced, coupling among the amplifier chips is reduced, high isolation between amplification channels is realized, a high order mode in the cavity is suppressed, the working bandwidth is expanded, and the high-isolation large-scale array synthesis power amplifier can be widely applied to a synthesis amplifier industry.

Description

technical field [0001] The invention relates to the field of power amplifiers, in particular to a large-scale array synthesis power amplifier with high isolation. Background technique [0002] The spatial synthesizing amplifier in the rectangular waveguide is composed of a single "card" with a symmetrical structure, on which there are multiple power devices in a symmetrical structure, and the multiple power devices are distributed in parallel in the waveguide cavity. However, due to the limited width of the waveguide cavity, the number of antennas and chips that can be accommodated on each card is limited. The problem of this structure is more prominent in the millimeter-wave band with high frequency, because the internal space is small, and the space after parallel stacking leads to the internal division is too small to place microwave chips. This results in a very small number of array units, and cannot form a large-scale synthetic array. Contents of the invention [0...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P5/16H03F3/60
Inventor 贾鹏程孔翔鸣
Owner GUANGZHOU STARWAY COMM TECH
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