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Ion injection energy test structure and test method and electronic device

A technology for ion implantation energy and test structure, which is applied in the field of semiconductors and can solve problems such as no structure capable of monitoring implantation energy

Inactive Publication Date: 2018-01-26
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] There are currently many test structures that can monitor implant dose, but none that can monitor implant energy

Method used

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  • Ion injection energy test structure and test method and electronic device
  • Ion injection energy test structure and test method and electronic device
  • Ion injection energy test structure and test method and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Below with reference to accompanying drawing, the test structure of the present invention is described in detail, figure 2 A schematic structural view of the test structure of the present invention is shown.

[0064] Next, the test structure of the present invention will be described in detail.

[0065] Such as figure 2 Shown, test structure described in the present invention comprises:

[0066] a semiconductor substrate 201 having a first conductivity type;

[0067] The second implantation region 202, located in the semiconductor substrate, has a second conductivity type;

[0068] a first implantation region 203, located in the second doped region, having a first conductivity type;

[0069] Wherein, the semiconductor substrate and the second injection region are electrically connected to a ground terminal, and a stress current is applied to the first injection region.

[0070] The semiconductor substrate 201 may be at least one of the materials mentioned below: ...

Embodiment 2

[0092] The present invention also provides a test method based on the test structure described in Embodiment 1, such as figure 1 As shown, the method includes:

[0093] electrically connecting the semiconductor substrate and the second injection region to a ground terminal, and applying a stress current to the first injection region;

[0094] Testing the resistance of the junction formed by the first implantation region and the second implantation region, and analyzing the ion implantation energy according to the resistance.

[0095] Wherein, when the resistance is greater than the reference resistance, the junction is far away from the surface of the semiconductor substrate, and the ion implantation energy in the first implantation region is greater than the reference energy.

[0096] Wherein, when the resistance is less than a reference resistance, the junction is close to the surface of the semiconductor substrate, and the energy of ion implantation in the first implantati...

Embodiment 3

[0107] Another embodiment of the present invention provides an electronic device, which includes a test structure, which is the test structure in the first embodiment above.

[0108] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned test structure, such as a mobile phone motherboard with this integrated circuit, etc.

[0109] The electronic device also has the above-mentioned advantages due to the higher performance of the included test structure.

[0110] in, image 3 An example of a mobile phone handset is shown. The mobile phone handset 300 is provided with a display portion 302 included in a housing 301, operation buttons 303, an external connection port 304, a speaker 305, a microphone 306, and the like.

[0111] Wherein the mobile phone ha...

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Abstract

The invention relates to an ion injection energy test structure and test method and an electronic device. The test structure comprises a semiconductor substrate, a second injection region and a firstinjection region, wherein the semiconductor substrate has a first conductive type, the second injection region is arranged in the semiconductor substrate and has a second conductive type, the first injection region is arranged in the second injection region and has a first conductive type, the semiconductor substrate and the second injection region are electrically connected to a grounding end, and a stress current is applied to the first injection region. By the test structure, the ion injection energy can be monitored, an abnormal wafer is captured on line during WAT test, the abnormal riskof the wafer is reduced, and the performance and the yield of a semiconductor device are further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an ion implantation energy testing structure and testing method, and an electronic device. Background technique [0002] In recent years, semiconductor manufacturing technology has advanced by leaps and bounds. At present, products are thin, light and compact. ICs are getting smaller and stronger, with more and more pins. In order to reduce the area occupied by chip packaging and improve IC performance, flip-chip (FlipChip) packaging is widely used in graphics chips, chipsets, memory and CPU. The unit price of the above-mentioned high-end packaging method is high. If the chip test can be carried out before packaging, if there are defective products in the wafer, they will be marked immediately, and these marked defective products will be discarded before the subsequent packaging process, which can save unnecessary costs. packaging cost. [0003] A commonly used method in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 孟丽华王兴李洋
Owner SEMICON MFG INT (SHANGHAI) CORP