Complementary metal oxide semiconductor (CMOS) image sensor structure for preventing scribing damage and fabrication method thereof

Abstract

The invention discloses a complementary metal oxide semiconductor (CMOS) image sensor structure for preventing scribing damage and a fabrication method thereof. A scribing protection groove is formedin an upper surface of a silicon substrate of a circuit silicon wafer along a scribing groove region and extends to a position above protection rings at two sides of a scribing groove, a blocking layer is formed on a surface of an inner wall of the scribing protection groove, the scribing protection groove is filled with a dielectric layer, a composite protection ring structure is formed at the periphery of an internal region of a chip by combining a groove isolation structure arranged below the scribing protection groove and the protection rings, so that a gap caused by scribing damage in thedielectric layer is shielded by the blocking layer and is prevented from extending to the internal region of the chip along the silicon substrate all the way, thus, unfavorable influence cannot be generated on the chip, the performance and the function of the CMOS image sensor are ensured, and the finished rate and the reliability are improved.

Description

technical field [0001] The present invention relates to the technical field of CMOS image sensors, in particular to a CMOS image sensor structure capable of preventing scribing damage and a manufacturing method thereof. Background technique [0002] An image sensor refers to a device that converts optical signals into electrical signals. Large-scale commercial image sensor chips include charge-coupled device (CCD) and complementary metal-oxide semiconductor (CMOS) image sensor chips. Compared with traditional CCD sensors, CMOS image sensors have the characteristics of low power consumption, low cost and compatibility with CMOS technology, so they are more and more widely used. CMOS image sensors are now not only used in consumer electronics such as miniature digital cameras (DSC), mobile phone cameras, video cameras and digital single-lens reflex cameras (DSLR), but also in automotive electronics, monitoring, biotechnology and medical fields. [0003] CMOS image sensors can...

AI Technical Summary

Problems solved by technology

Since damage 11 is likely to occur on the edge of the cut scribe groove, and the damage caused by the cutting of these silicon wafers will evolve into a crack 11 ′, which extends from the cut scribe groove region D’ along the silicon substrate 12 to the chip. The inner area C' may cause performance degradation such as increase of dark current of CMOS image sensor, increase of white pixels, etc., and may even cause failure of the entire chip in severe cases.

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