Three-level inverter

A three-level inverter and capacitor technology, applied in electrical components, high-efficiency power electronic conversion, conversion of AC power input to DC power output, etc., can solve problems such as large circuit conduction losses

Inactive Publication Date: 2018-02-09
EMERSON NETWORK POWER CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present application provides a three-level inverter to solve the problem of large circuit conduction loss in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-level inverter
  • Three-level inverter
  • Three-level inverter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1 of the present application provides a three-level inverter, such as Figure 4 As shown, it may include a first transistor Q1, a second transistor Q2, a first capacitor C1, a second capacitor C2, a third transistor Q3 and a fourth transistor Q4, wherein:

[0023] The collector of the first transistor Q1 is connected to the positive bus terminal Vbus1 of the three-level inverter; the emitter of the second transistor Q2 is connected to the negative bus terminal Vbus2 of the three-level inverter;

[0024] When the conduction time of the first transistor Q1 is greater than or equal to 1 / N period, the first transistor Q1 adopts a transistor with optimized conduction loss, and the second transistor Q2 adopts a transistor with optimized switching loss;

[0025] When the conduction time of the second transistor Q2 is greater than or equal to 1 / N period, the second transistor Q2 adopts a transistor with optimized conduction loss, and the first transistor Q1 adopts a ...

Embodiment 2

[0043] Embodiment 2 of the present application provides a three-level inverter, such as Figure 5 As shown, it may include a first transistor D1, a second transistor D2, a first capacitor C1, a second capacitor C2, a fifth transistor, a sixth transistor, a first diode and a second diode, wherein:

[0044] The collector of the first transistor Q1 is connected to the positive bus terminal Vbus1 of the three-level inverter; the emitter of the second transistor Q2 is connected to the negative bus terminal Vbus2 of the three-level inverter;

[0045] When the conduction time of the first transistor Q1 is greater than or equal to 1 / N period, the first transistor Q1 adopts a transistor with optimized conduction loss, and the second transistor Q2 adopts a transistor with optimized switching loss;

[0046] When the conduction time of the second transistor Q2 is greater than or equal to 1 / N period, the second transistor Q2 adopts a transistor with optimized conduction loss, and the first...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a three-level inverter with little circuit conduction loss. The three-level inverter comprises a first transistor and a second transistor, wherein the collector of the first transistor is connected with the positive bus end of the three-level inverter; the emitter of the second transistor is connected with the negative bus end of the three-level inverter; when the conduction time of the first transistor is greater than or equal to a 1/N period, the first transistor adopts a transistor which optimizes the conduction loss, and the second transistor adopts a transistor which optimizes switch loss; and when the conduction time of the second transistor is greater than or equal to the 1/N period, the second transistor adopts a transistor which optimizes the conduction loss, and the first transistor adopts a transistor which optimizes the switch loss, and N is a preset real number larger than 1.

Description

technical field [0001] The present application relates to the technical field of electronic circuits, in particular to a three-level inverter. Background technique [0002] In the prior art three-level inverter, the main functional devices include four transistors, wherein: the collector of the first transistor is connected to the positive bus terminal, and the emitter of the second transistor is connected to the negative bus segment; the first transistor and The second transistor uses the same type of transistor, and the third transistor and the fourth transistor use the same type of transistor. [0003] The above-mentioned three-level inverter implements inverter control by inputting different modulation pulses to the base of each transistor, so as to convert the DC power input from the positive bus terminal and the negative bus terminal into AC power and output it from the AC output terminal. In the prior art, Space Vector Pulse Width Modulation (SVPWM) control is usuall...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/483H02M7/539
CPCH02M7/483H02M7/539H02M1/0054Y02B70/10
Inventor 杨建宁
Owner EMERSON NETWORK POWER CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products