Full-bridge llc resonant plasma power supply based on sic power device

Abstract

The invention provides a full-bridge LLC resonant plasma power supply based on SiC power devices, which is characterized in that it includes a main circuit and a control circuit; the main circuit includes a rectification and filtering module, a high-frequency full-bridge inverter module, and a high-frequency A frequency conversion voltage module and a fast rectification and filtering module; the rectification and filtering module is connected to the three-phase AC input power supply, and the fast rectification and filtering module is connected to the load; wherein, the high-frequency full-bridge inverter module adopts a full-bridge inverter LLC type zero-voltage soft-switching topology Structure; the high-frequency full-bridge inverter module, the high-frequency transformer module, and the fast rectification and filtering module are respectively connected to the control circuit, so as to realize the power output controlled by the control circuit. The plasma power supply has high efficiency, high power density, high reliability, can reduce the intensity of electromagnetic interference and can achieve higher power output, has good dynamic response performance, and is conducive to realizing high-speed and precise control of plasma loads.

Description

technical field [0001] The patent of the present invention relates to the technical field of special power supplies, in particular to a full-bridge LLC resonant plasma power supply based on SiC power devices. Background technique [0002] Plasma power supplies are developing towards higher requirements such as high efficiency, high power density (miniaturization), high frequency and high voltage, which are mainly achieved by increasing the frequency of power devices and reducing power consumption. At present, Si-based power devices are widely used in high-power plasma power supplies at home and abroad due to their high voltage, high current, and strong power. However, the performance of Si-based power devices is close to the theoretical limit determined by its material properties. The potential to increase frequency and reduce power consumption is extremely limited. [0003] Compared with Si power devices, the new generation of SiC power devices has significant advantages i...

AI Technical Summary

Problems solved by technology

However, the application of SiC power devices in plasma power supplies is still blank; therefore, it is necessary to develop a plasma power supply based on SiC power devices to improve its power efficiency and power density.

Images