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Method for making three-dimensional memory

A technology of polysilicon layer and hard mask layer, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as increasing costs, and achieve the effects of eliminating load effects, reducing costs, and simplifying processes

Active Publication Date: 2020-04-14
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And in the implementation of the above method, since the CMP process is used to remove the polysilicon layer, and the wet etching method is used to remove the SiN hard mask layer, the cost of the process is increased.

Method used

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  • Method for making three-dimensional memory
  • Method for making three-dimensional memory
  • Method for making three-dimensional memory

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Embodiment Construction

[0024] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0025] refer to Figure 5-7 , this embodiment provides a method for removing the polysilicon layer and the hard mask layer of the channel via:

[0026] Such as Figure 5 As shown, it includes depositing a polysilicon layer 2 to a certain depth on the surface of the hard mask SiN layer 1 and in the contact hole;

[0027] Then if Figure 6 As shown, a one-step dry etching method is used to remove the surface of the hard mask SiN l...

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Abstract

Provided is a manufacturing method of a three dimensional memory, which adopts a one-step dry etching method, and comprises the steps of conducting etching on top polysilicon, and staying at the nitride; etching a hard mask SiN layer and staying at the oxide. The etchant needs to have high selectivity on the SiN and the oxide so that the loss of the oxide can be less than 50 angstrom. The invention is advantageous in that through adopting the one-step dry etching method, the usage of CMP can be reduced, and the wet etching can be replaced by the dry etching to remove the hard mask SiN; the thickness change of different array areas caused by load effect in the CMP process can be removed, and technology can be simplified and cost can be reduced.

Description

technical field [0001] The invention relates to a manufacturing method of a three-dimensional memory, in particular to a method for removing a polysilicon layer and a hard mask layer of channel via holes. Background technique [0002] Etching techniques are commonly used techniques in semiconductor fabrication. Etching is the technique of removing material using chemical reaction or physical impact. Etching techniques can be classified into wet etching and dry etching. Wet etching is a technique in which the etching material is immersed in an etching solution for etching. Dry etching is a technique that uses plasma to etch thin films. When the gas exists in the form of plasma, it has two characteristics: on the one hand, the chemical activity of these gases in the plasma is much stronger than that under normal conditions. React with the material to achieve the purpose of etching and removal; on the other hand, the electric field can also be used to guide and accelerate t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/3213H01L21/768
CPCH01L21/31116H01L21/32137H01L21/32139H01L21/7684
Inventor 赵新梅霍宗亮唐兆云隋翔宇陆智勇江润峰王香凝石晓静王攀王猛闫伟明
Owner YANGTZE MEMORY TECH CO LTD