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Device integrated with junction field effect transistor and manufacturing method thereof

A field-effect transistor and device technology, applied in the direction of transistors, semiconductor devices, electric solid-state devices, etc., can solve the problem of unstable pinch-off voltage of JFET

Active Publication Date: 2018-03-09
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a device integrated with a junction field effect transistor to solve the problem of unstable pinch-off voltage of the traditional JFET

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  • Device integrated with junction field effect transistor and manufacturing method thereof
  • Device integrated with junction field effect transistor and manufacturing method thereof
  • Device integrated with junction field effect transistor and manufacturing method thereof

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Embodiment Construction

[0027] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0029] It sho...

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Abstract

The invention relates to a device integrated with a junction field effect transistor and a manufacturing method thereof. The JFET region of the device comprises: a JFET source, first wells, a metal electrode of the JFET source, a JFET metal gate and a clamp region, wherein the JFET source is of a first conductive type; the first wells are of a second conductive type and formed on two sides of theJFET source; the metal electrode of the JFET source is formed on the JFET source and is in contact with the JFET source; the JFET metal gate is arranged on the first wells on the two sides of the JFETsource; and the clamp region is located below the JFET metal gate and within the first well, is of the second conductive type and has an ion concentration greater than that of the first wells. The ion concentration of the first wells is improved by the clamp region of the second conductive type, and the depletion capability of the channel region is enhanced, so that the JFET pinch-off voltage stability is improved to certain extent. At the same time, the clamp region enhances the electric field strength therein, changes the path of avalanche current and improves the stability of the device.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a device integrated with a junction field effect transistor, and also to a method for manufacturing the device integrated with a junction field effect transistor. Background technique [0002] Integrating a high-voltage Junction Field-Effect Transistor (JFET) on a high-voltage process platform is an advanced development and concept in the field of smart power integrated circuits today, which can greatly improve the on-state performance of vertical power devices, and significantly Reducing the chip area is in line with the mainstream trend of today's smart power device manufacturing. [0003] The high-voltage integrated JFET with traditional structure can be realized with a relatively simple process, but the instability of its pinch-off voltage limits its large-scale application in the field of intelligent power integration. Contents of the invention [0004] Based on t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/06H01L29/06
CPCH01L27/0207H01L27/0617H01L29/0603H01L29/0684H01L27/085H01L29/8083H01L29/7803H01L29/7802H01L29/42316H01L29/36H01L29/66909H01L29/1066H01L29/41766H01L29/1095H01L27/02H01L29/06H01L27/06H01L27/098H01L29/66712
Inventor 顾炎程诗康张森
Owner CSMC TECH FAB2 CO LTD
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