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Graphene pellicle for extreme ultraviolet lithography

A graphene layer and material layer technology, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve the problems of diaphragm deformation, difficulty in large-scale production of effective thin films, and short wavelengths.

Inactive Publication Date: 2018-03-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Unlike masks used in deep-UV lithography, which traditionally employ thin films to protect the mask surface, it is currently difficult to fabricate effective thin films for EUV masks on a large scale
One reason is that the wavelength of EUV radiation is very short and the membrane of a conventional film will absorb it so much that the membrane will deform from overheating after a few uses and will also substantially reduce the reach of the target. extreme ultraviolet energy

Method used

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  • Graphene pellicle for extreme ultraviolet lithography
  • Graphene pellicle for extreme ultraviolet lithography
  • Graphene pellicle for extreme ultraviolet lithography

Examples

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Embodiment Construction

[0041] The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these specific examples are only examples and are not intended to be limiting. For example, forming the first feature "on" or the second feature "on" in the following description may include an embodiment in which the first feature and the second feature are formed in direct contact, and may also include An embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not directly contact. In addition, the present disclosure may repeat reference numbers and / or letters in various examples. This repetition is for the purpose of brevity and clarity, rather than representing the relationship between the various embodiments and...

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Abstract

A method for forming a graphene layer includes: depositing a first material layer on a substrate; and depositing a graphene layer on the first material layer, thereby forming a first component. The method also includes: attaching a carrier to the graphene layer; removing the substrate from the first component; and removing the first material layer from the first component.

Description

Technical field [0001] The embodiment of the present invention relates to a method for forming a graphene layer. Background technique [0002] As the semiconductor industry advances to pursue higher device density, higher performance, and lower cost nanotechnology, stricter requirements have been placed on the lithography tools used in semiconductor manufacturing. Technologies such as extreme ultraviolet (EUV) lithography have been used to support the critical dimension (CD) requirements of smaller integrated circuit (IC) devices. Extreme ultraviolet lithography uses radiation in the extreme ultraviolet region with a wavelength of about 1 nanometer to 100 nanometers (for example, 13.5 nanometers), which is shorter than that in deep ultraviolet (DUV) lithography (for example, 193 nanometer lithography). The wavelength is much shorter. The extreme ultraviolet lithography uses a mask (or reticle) that reflects extreme ultraviolet radiation from a radiation source toward a target (...

Claims

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Application Information

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IPC IPC(8): C01B32/194
Inventor 涂志强陈俊郎
Owner TAIWAN SEMICON MFG CO LTD