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Preparation method of single-side wet-process black silicon silicon wafer

A single-sided texturing, silicon wafer technology for end product manufacturing, sustainable manufacturing/processing, climate sustainability, etc.

Active Publication Date: 2019-09-03
句容协鑫光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Based on this, it is necessary to address the problem of how to simplify the wet black silicon process, and provide a method for preparing a single-sided wet black silicon wafer that can simplify the preparation method

Method used

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  • Preparation method of single-side wet-process black silicon silicon wafer
  • Preparation method of single-side wet-process black silicon silicon wafer
  • Preparation method of single-side wet-process black silicon silicon wafer

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preparation example Construction

[0062] See image 3 , the preparation method of the single-side wet process black silicon wafer of an embodiment, comprises the following steps:

[0063] S10. Place several silicon wafers in a two-by-two parallel manner, wherein the distance between the two silicon wafers in the two-by-two phase is 0.1 mm˜3 mm.

[0064] Wherein, the method of "combining two phases" in the present invention refers to the fact that each side of the two silicon wafers is close to each other, and the distance between the two silicon wafers is 0.1 mm to 3 mm, and at the same time, each side of the two silicon wafers is exposed to the air. .

[0065] When the distance between any two silicon wafers combined in two phases is 0.1mm-3mm, a good polishing effect can be achieved on both surfaces of each silicon wafer during subsequent double-sided polishing.

[0066] In step S10, acid and alkali resistant flower baskets can be used to load the chips, and two silicon wafers are loaded into each slot of ...

Embodiment 1

[0112] The preparation method of the single-sided wet process black silicon wafer of the present embodiment comprises the following steps:

[0113] 1. Place several silicon wafers in a two-by-two parallel manner, wherein the distance between two silicon wafers in a two-by-two phase is 0.1 mm to 3 mm.

[0114] 2. The double-sided polishing of the silicon wafer was carried out with an alkali polishing liquid. The bubbling method was adopted during polishing. The concentration of the alkali polishing liquid was 12%, the polishing temperature was 75° C., and the polishing time was 3 minutes to obtain a double-sided polished silicon wafer.

[0115] 3. Perform the first pure water cleaning, acid cleaning and second pure water cleaning on the double-sided polished silicon wafer in sequence; wherein, the time for the first pure water cleaning is 100s; use 5% nitric acid solution or Sulfuric acid solution is used for acid cleaning, and the acid cleaning time is 60s; the time for the se...

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Abstract

The invention relates to a preparation method of a single-side wet black silicon wafer. The preparation method comprises the following steps of placing a plurality of silicon wafers in a paired way, wherein the distance between two silicon wafers in the paired way is 0.1-3 millimeters; performing double-side polishing on each silicon wafer by dynamic reaction to obtain a silicon wafer with doublepolished surfaces; performing single-side texturing on the silicon wafer with double polished surfaces by wet etching to obtain a silicon wafer with a single textured surface, wherein the reaction process in wet etching is allowed to be stood; and separating the silicon wafers arranged in parallel in the paired way and with single textured surfaces to obtain the single-side wet black silicon wafer. In the preparation method of the single-side wet black silicon wafer, the silicon wafers are arranged in parallel in the paired way for double-side polishing and single-side texturing, the reactionprocess in wet etching is allowed to be stood, and a texturing surface structure can be prevented from being formed on a back surface of each silicon wafer, the single-side wet black silicon wafer canbe directly obtained after separation, the texturing surface on the back surface of the silicon wafer is not needed to be subsequently removed, and the preparation method is simplified.

Description

technical field [0001] The invention relates to the technical field of silicon wafer manufacturing, in particular to a method for preparing a single-sided wet-process black silicon wafer. Background technique [0002] Black silicon technology is widely favored by polycrystalline cell manufacturers due to its good light trapping effect, can greatly improve the conversion efficiency of polycrystalline silicon wafers, and can solve the suede problem of diamond wire-cut polycrystalline silicon wafers. In the traditional trough-type wet-process black silicon, the silicon wafer is polished first, then inserted into the flower basket, immersed in the solution for texturing, so black silicon texture can be formed on both sides. However, in the manufacture of the battery, the textured structure on the back has no effect on the battery, but will affect the passivation effect of the aluminum on the back. Therefore, in the production of the battery, the black silicon texture on the back...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02363H01L31/1804Y02P70/50
Inventor 宫龙飞吉鑫姜小松阮文娟金善明
Owner 句容协鑫光伏科技有限公司