Preparation method of single-side wet-process black silicon silicon wafer
A single-sided texturing, silicon wafer technology for end product manufacturing, sustainable manufacturing/processing, climate sustainability, etc.
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[0062] See image 3 , the preparation method of the single-side wet process black silicon wafer of an embodiment, comprises the following steps:
[0063] S10. Place several silicon wafers in a two-by-two parallel manner, wherein the distance between the two silicon wafers in the two-by-two phase is 0.1 mm˜3 mm.
[0064] Wherein, the method of "combining two phases" in the present invention refers to the fact that each side of the two silicon wafers is close to each other, and the distance between the two silicon wafers is 0.1 mm to 3 mm, and at the same time, each side of the two silicon wafers is exposed to the air. .
[0065] When the distance between any two silicon wafers combined in two phases is 0.1mm-3mm, a good polishing effect can be achieved on both surfaces of each silicon wafer during subsequent double-sided polishing.
[0066] In step S10, acid and alkali resistant flower baskets can be used to load the chips, and two silicon wafers are loaded into each slot of ...
Embodiment 1
[0112] The preparation method of the single-sided wet process black silicon wafer of the present embodiment comprises the following steps:
[0113] 1. Place several silicon wafers in a two-by-two parallel manner, wherein the distance between two silicon wafers in a two-by-two phase is 0.1 mm to 3 mm.
[0114] 2. The double-sided polishing of the silicon wafer was carried out with an alkali polishing liquid. The bubbling method was adopted during polishing. The concentration of the alkali polishing liquid was 12%, the polishing temperature was 75° C., and the polishing time was 3 minutes to obtain a double-sided polished silicon wafer.
[0115] 3. Perform the first pure water cleaning, acid cleaning and second pure water cleaning on the double-sided polished silicon wafer in sequence; wherein, the time for the first pure water cleaning is 100s; use 5% nitric acid solution or Sulfuric acid solution is used for acid cleaning, and the acid cleaning time is 60s; the time for the se...
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