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Gas injector device used for semiconductor equipment

A gas injection and semiconductor technology, applied in the direction of injection devices, injection devices, electrical components, etc., can solve the problem that the output gas flow rate is difficult to adjust and control in real time

Active Publication Date: 2018-04-06
HERMES EPITEK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The gas injection device 100 includes a first input pipeline 111, a second input pipeline 112 and a third input pipeline 113, which are arranged vertically, so that the first input pipeline 111, the second input pipeline 112 and the third input pipeline The output ends of 113 are vertically stacked with each other, so that the output gas can only provide one-way vertical layered distribution flow, and the gases are easy to mix with each other at the output end, and the flow rate of the output gas is also difficult to adjust and control in real time

Method used

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  • Gas injector device used for semiconductor equipment
  • Gas injector device used for semiconductor equipment
  • Gas injector device used for semiconductor equipment

Examples

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Embodiment Construction

[0061] Please refer to Figure 2A and Figure 2B , Which respectively show a component exploded view and a partial cross-sectional view of a combined structure of a gas injection device applied to semiconductor equipment according to an embodiment of the present invention. As shown in the figure, a gas injection device 200 applied to semiconductor equipment includes a bottom plate 210, a center cover 220, an intake body 230, an inner ring cover 240, and an outer ring cover 250. The bottom plate 210 includes a central area 212 and a plurality of passages 214. The passages 214 are arranged adjacent to the bottom plate 210 with the central area 212 as the center. The passage 214 also includes a plurality of first passages 214A and a plurality of second passages. 214B and a plurality of third channels 214C.

[0062] The central cover 220 is disposed on the central area 212 and forms a first air inlet cavity 260A with the bottom plate 210. The ring wall of the central cover 220 is con...

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Abstract

The invention provides a gas injector device used for semiconductor equipment. The gas injector includes a base plate, a center sleeve cover, an intake body, an inner cover and an outer cover. The base plate includes a plurality of channels including first channels, second channels and third channels. The center sleeve cover is operatively coupled with the base plate to form a first cavity, a wallof the center sleeve cover having a plurality of first communicating openings correspondingly connected to the first channels. The intake body includes a top portion, an inner wall and an outer wall.The outer cover is disposed between the inner wall and the outer wall. The invention aims to provide an automatic gas injector applied to the semiconductor device to enable output gas to flow in a separated manner and a distributed manner and mixing of the gas in the ejection point is avoided. At the same time, gas flow rate can be adjusted in real time effectively.

Description

Technical field [0001] The invention relates to a gas injection device, in particular to a gas injection device applied to semiconductor equipment. Background technique [0002] In the current common chemical vapor deposition (CVD) system equipment of the semiconductor manufacturing process, the gas injection device is vertically stacked to deliver the gas source gas to the reaction chamber. [0003] For example, please refer to the first figure, which shows a side view of a conventional chemical vapor deposition (CVD) process equipment. The gas injection device 100 includes a first input pipe 111, a second input pipe 112, and a third input pipe 113, which are arranged vertically separated, so that the first input pipe 111, the second input pipe 112, and the third input pipe The output ends of the 113 are stacked vertically with each other, so that the output gas can only provide a one-way vertical layered distribution flow, and the gases are easily mixed at the output end, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455H01J37/32
CPCC23C16/455H01J37/32449C23C16/45508B05B1/185B05B1/005H01J37/3244C23C16/45563B05B15/50
Inventor 黄灿华林伯融
Owner HERMES EPITEK
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