Negative photoresist etching device

Abstract

The invention discloses a negative photoresist etching device. The negative photoresist etching device comprises a conveying belt, a first storage box, a drying box, a photoetching box and a second storage box, wherein the drying box is arranged at a left side of a part above the conveying belt, a left edge and a right edge of a part below the drying box both are fixedly connected with a second support seat, an electric heating box is arranged in the drying box, two sides of the electrical heating box are fixedly connected with a temperature sensor, a central position of a part below the electric heating box is fixedly connected with an air outlet, the photoetching box is arranged at a right side of the drying box, a right side of a part above the photoetching box is fixedly connected witha first air cylinder, the first air cylinder is connected with one end of a first pneumatic piston in a sliding way, the other end of the first pneumatic piston is fixedly connected with a first baffle block, an exposure machine is arranged at a left side of the first air cylinder, and the exposure machine is fixedly connected with the bottom of the photoetching box. By the negative photoresist etching device, negative photoresist etching is achieved.

Description

Technical field: [0001] The invention relates to the technical field of etching, in particular to a negative photoresist etching device. Background technique: [0002] At present, display technology has been widely used in the display of televisions, mobile phones, and public information. The display products used to display images mainly include array substrates for driving display panels to display images and color filter substrates for color display. In the manufacturing process of the array substrate and the color filter substrate, due to the difference in density of patterns in different regions on the substrate, the ion consumption concentration that will affect the etching is different, so the etching rate will be different, resulting in poor etching uniformity. question. This is because ions need to be consumed during the etching process, and the ion concentration consumed in the pattern-intensive area is large, and the ion concentration consumed in the non-pattern-...

AI Technical Summary

Problems solved by technology

In the manufacturing process of the array substrate and the color filter substrate, due to the difference in density of patterns in different regions on the substrate, the ion consumption concentration that will affect the etching is different, so the etching rate will be different, resulting in poor etching uniformity. question

This is because ions need to be consumed during the etching process, and the ion concentration consumed in the pattern-intensive area is large, and the ion concentration consumed in the non-pattern-intensive area is small. Therefore, the degree of pattern density in different areas is different, resulting in different degrees of ion consumption. The etch rate difference caused by uneven concentration leads to poor etch uniformity of the substrate

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