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A method for realizing large-area super-resolution lithography based on resonant cavity structure

A resonant cavity and super-resolution technology, which is applied in the field of large-area super-resolution lithography based on a resonant cavity structure, can solve the problem of expensive processing of large-area nano-patterns

Active Publication Date: 2020-10-23
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (1) At present, most large-area nano-pattern mask processing adopts the mode of electron beam processing. The present invention provides an alternative technology for large-area dense mask processing with a period of 120nm and below, which can solve the problem of expensive large-area nano-pattern processing. ;

Method used

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  • A method for realizing large-area super-resolution lithography based on resonant cavity structure
  • A method for realizing large-area super-resolution lithography based on resonant cavity structure
  • A method for realizing large-area super-resolution lithography based on resonant cavity structure

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Effect test

Embodiment 1

[0060] The present invention realizes a large-area super-resolution photolithography method based on a resonant cavity structure, and the specific steps are as follows:

[0061] Step 1. Coating 25nm photoresist on the bulk silicon material 1 .

[0062] Step 2, evaporating 15nm aluminum on the photoresist.

[0063] Step 3, spin-coating a water-soluble diazonium salt p-diazodiphenylamine chloridezinc chloride (DZS) film layer with a thickness of 50 nm on the aluminum surface. The device structure formed after step 3 is as follows figure 1 shown.

[0064] Step 4. Select the interference light source produced by the He-Cd laser with a wavelength of 441.6nm to illuminate the structure obtained in step 3 to make the water-soluble diazonium salt photosensitive, and the light intensity is 10mW / cm 2 , the illumination time is 250s, forming a 220nm periodic pattern, such as figure 2 shown.

[0065] Step 5. Put the structure obtained in step 4 into a central wavelength of 365nm, an...

Embodiment 2

[0069] The present invention realizes a large-area super-resolution lithography method based on a resonant cavity structure, and the specific steps are as follows:

[0070] Step 1, depositing a 50nm gold film layer on a quartz substrate.

[0071] Step 2, coating 120nm thick AR-3170 photoresist on the gold film layer.

[0072] Step 3. Bake the structure obtained in step 2 in an oven at 100°C for 0.5 hours.

[0073] Step 4, put the baked structure obtained in step 2 into magnetron sputtering, and deposit a silicon film layer with a thickness of 20 nm.

[0074] Step 5, coating a 25nm photoresist on the structure obtained in step 4.

[0075] Step 6, evaporating 15nm aluminum on the photoresist.

[0076] Step 7, spin-coating a water-soluble diazonium salt p-diazodiphenylamine chloridezinc chloride (DZS) film layer with a thickness of 50 nm on the aluminum surface.

[0077] Step 8. Select the interference light source produced by the He-Cd laser with a wavelength of 441.6nm to i...

Embodiment 3

[0086] The present invention realizes a large-area super-resolution lithography method based on a resonant cavity structure, and the specific steps are as follows:

[0087] Step 1, depositing a 50nm silver film layer on the quartz substrate.

[0088] Step 2, depositing a silicon film layer with a thickness of 20 nm on the silver film layer.

[0089] Step 3. Coating 25nm photoresist on the structure obtained in step 2.

[0090] Step 4, evaporating 15nm aluminum on the photoresist.

[0091] Step 5, spin-coating a water-soluble diazonium salt p-diazodiphenylamine chloridezinc chloride (DZS) film layer with a thickness of 50 nm on the aluminum surface.

[0092] Step 6. Select the interference light source generated by the He-Cd laser with a wavelength of 441.6nm to illuminate the structure obtained in step 5 to make the water-soluble diazonium salt photosensitive, and the light intensity is 10mW / cm 2 , The illumination time is 250s, forming a 220nm periodic pattern.

[0093] S...

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Abstract

The present invention proposes a large-area super-resolution lithography method based on a resonant cavity structure. A resonant cavity structure including a dielectric layer and a metal layer is prepared on a silicon substrate or a silicon film layer, and a layer of special photosensitive material is prepared on the resonant cavity structure. . The transmittance or / and refraction index of the upper photosensitive material changes obviously under certain traditional interference lithography illumination conditions, and is used as an amplitude mask grating in the second illumination. The resonant cavity structure composed of silicon substrate / photosensitive material / metal layer can excite the surface plasmon effect, and realize the interference of the high-frequency transverse wave vector of the amplitude-type mask grating formed by the upper layer of photosensitive material in the resonant cavity, thereby realizing large-area ultrasonography. Resolve lithography. This method is combined with traditional interference lithography. Through the secondary interference effect of the resonant cavity structure, the resolution of traditional interference lithography can be increased by at least 2 times, and it is the preparation of silicon-based functional devices with feature sizes below 100 nanometers. An inexpensive and simple method is provided.

Description

technical field [0001] The invention belongs to the field of micro-nano photolithography processing technology and micro-nano device processing, and specifically relates to a large-area super-resolution photolithography method based on a resonant cavity structure. Background technique [0002] The interference of light is the basic characteristic of light wave nature. When the frequency of the two light waves is the same, the vibration direction is the same, and they have a fixed phase difference, stable interference fringes of alternating light and dark can be formed. If the fringes with periodic intensity changes are recorded on the photosensitive layer, they will show a pattern with periodic thickness changes, so as to realize "photolithography". Laser interference technology is based on this principle. This technology has the characteristics of no mask, large field of view, long focal depth, etc., and is now widely used in many fields of nano-pattern and nano-device pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/2022G03F7/70466G03F7/70
Inventor 罗先刚蒲明博马晓亮刘玲王长涛
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI