Bias voltage generation circuit in Internet of Things

A technology for generating circuits and bias voltages, which can be used in adjusting electrical variables, control/regulating systems, instruments, etc., and can solve problems such as non-dependence

Inactive Publication Date: 2018-04-10
丹阳恒芯电子有限公司
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional method can be designed with a bandgap reference circuit, but its power consumption is at the microwatt level, which does not belong to the low-power design category

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bias voltage generation circuit in Internet of Things
  • Bias voltage generation circuit in Internet of Things

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] combine figure 1 As shown, in the following embodiments, the bias voltage generating circuit at least includes: a micro current generating circuit, the core of which is that the MOS tube operates in the sub-threshold region, so the overall operating current is as low as nanoampere The current and power consumption are very small; a reference generation circuit adopts a cascode structure, and the precision of the generated bias voltage is also very high. Since the entire circuit does not use resistors, the overall circuit area is also very small.

[0011] The micro-current generating circuit is composed of PMOS tubes PM1, PM2, PM7, NMOS tubes NM8, NM9, PM7 is a forward diode, and its voltage is a threshold voltage, which is equivalent to the difference between the gate-source voltage of NM8 tube and NM9 tube. And, then the NM8 tube is forced to enter the sub-threshold region, so the generated current Ib is a small current of nA level.

[0012] figure 2 It is a schemat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a bias voltage generation circuit in the Internet of Things. The bias voltage generation circuit comprises a micro-current generation circuit and a reference generation circuit, wherein according to the core of the micro-current generation circuit, an MOS transistor works in a sub-threshold area, so that the overall working current is low to the nano-ampere level, and the power consumption is very low; a cascaded structure is adopted by the reference generation circuit, so that the generated bias voltage is very high in precision and is affected little by temperature. No resistors are adopted in the whole circuit, so the area of the overall circuit is very small.

Description

technical field [0001] The invention relates to the field of bias voltage generation circuits, in particular to a bias voltage generation circuit in the Internet of Things. Background technique [0002] In the Internet of Things and most wireless communication applications, the relevant receiving circuits or transmitting circuits require low power consumption, so low-power bias voltage generating circuits are very critical and necessary for the entire application. As an important part of the analog circuit, the bias voltage circuit generally needs to work normally in a wide temperature range. Therefore, not only low power consumption is required, but also stable performance and good temperature characteristics are required. The traditional method can be designed with a bandgap reference circuit, but its power consumption is at the microwatt level, which does not belong to the low-power design category. Contents of the invention [0003] In order to overcome the above-ment...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 陈磊
Owner 丹阳恒芯电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap