Bias voltage generation circuit in Internet of Things

Abstract

The invention discloses a bias voltage generation circuit in the Internet of Things. The bias voltage generation circuit comprises a micro-current generation circuit and a reference generation circuit, wherein according to the core of the micro-current generation circuit, an MOS transistor works in a sub-threshold area, so that the overall working current is low to the nano-ampere level, and the power consumption is very low; a cascaded structure is adopted by the reference generation circuit, so that the generated bias voltage is very high in precision and is affected little by temperature. No resistors are adopted in the whole circuit, so the area of the overall circuit is very small.

Description

technical field [0001] The invention relates to the field of bias voltage generation circuits, in particular to a bias voltage generation circuit in the Internet of Things. Background technique [0002] In the Internet of Things and most wireless communication applications, the relevant receiving circuits or transmitting circuits require low power consumption, so low-power bias voltage generating circuits are very critical and necessary for the entire application. As an important part of the analog circuit, the bias voltage circuit generally needs to work normally in a wide temperature range. Therefore, not only low power consumption is required, but also stable performance and good temperature characteristics are required. The traditional method can be designed with a bandgap reference circuit, but its power consumption is at the microwatt level, which does not belong to the low-power design category. Contents of the invention [0003] In order to overcome the above-ment...

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Problems solved by technology

The traditional method can be designed with a bandgap reference circuit, but its power consumption is at the microwatt level, which does not belong to the low-power design category

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