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Array substrate, manufacturing method of array substrate, and display device

A technology of an array substrate and a manufacturing method, which is applied in the field of an array substrate and its manufacturing method and a display device, can solve problems such as poor reliability of thin film transistors, and achieve the effect of improving performance reliability

Inactive Publication Date: 2018-04-10
WUHAN TIANMA MICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the actual application process, it is found that the reliability of conventional thin film transistors is poor

Method used

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  • Array substrate, manufacturing method of array substrate, and display device
  • Array substrate, manufacturing method of array substrate, and display device
  • Array substrate, manufacturing method of array substrate, and display device

Examples

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Embodiment Construction

[0031] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0032] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0033] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

[0034] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have dif...

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PUM

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Abstract

The invention discloses an array substrate, a manufacturing method of the array substrate and a display device. The array substrate comprises a plurality of thin film transistors. Each thin film transistor comprises an active layer, wherein the active layer comprises a main channel region and edge channel regions, and the edge channel regions are located on the two sides of the main channel regionin the first direction; an insulating layer arranged on the active layer, wherein the orthographic projection of the insulating layer on the plane where the active layer is located covers the main channel region and the edge channel regions; and a grid electrode metal layer arranged on the insulating layer, wherein the grid electrode metal layer comprises a grid electrode and a grid electrode line. The grid electrode line is connected with the grid electrode, and the grid electrode line extends in the first direction. The orthographic projection of the grid electrode line on the plane where the active layer is located is overlapped with the main channel region. In the second direction, the width of the grid electrode is larger than the width of the grid electrode line. According to the technical scheme, the hump effect generated by the thin film transistors can be avoided. The performance reliability of the array substrate and the display device is improved.

Description

technical field [0001] The present invention relates to the field of display technology, and more particularly, to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] Currently, display panels mainly include two types: LCD display panels (Liquid Crystal Display, liquid crystal display panels) and OLED (Organic Light-Emitting Diode, organic light-emitting diode) display panels. In display panel technology, TFT (Thin Film Transistor, Thin Film Field Effect Transistor) is the core component of the display panel, and is generally arranged in an array on the substrate as a switching device for the pixel unit of the display panel. The thin film transistor includes: a gate, a source, a drain and an active layer. The source and the drain are respectively connected to the active layer. When a voltage is applied to the gate, as the gate voltage increases, the surface of the active layer will be consumed The exhaust layer is transfor...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L29/786H01L21/77
CPCH01L27/1222H01L27/1259H01L29/78696
Inventor 晏国文
Owner WUHAN TIANMA MICRO ELECTRONICS CO LTD