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A kind of preparation method of tungsten ditelluride nanotube

A technology of tungsten ditelluride and nanotubes, which is applied in the direction of binary selenium/telluride compounds, nanotechnology, metal selenide/telluride, etc., can solve the problems of less research on the preparation of one-dimensional nanostructures, and achieve tube wall shape Uniform appearance, conducive to large-scale industrial production, and wide applicability

Active Publication Date: 2020-05-05
FOSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But currently most of the information about WTe 2 The preparation of materials mainly focuses on bulk crystal materials or thin film materials, and there are few studies on the preparation of materials with one-dimensional nanostructures.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A preparation method of tungsten ditelluride nanotubes, comprising the following process steps:

[0018] 1) Spread 5g of tungsten hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore size of 100nm downwards on top of tungsten hexacarbonyl, seal the crucible and place it in a tube furnace, and feed it with 100 SCCM of argon Gas cleaning of the air in the furnace tubes. Under the protection of 100SCCM argon gas, raise the temperature to 100°C and keep it for 60 minutes, then continue to raise the temperature to 300°C and keep it for 40 minutes to obtain metal tungsten nanotube material, stop heating;

[0019] 2) After the tube furnace in step 1) is lowered to room temperature, take out the porous anodized aluminum template, place its opening downwards in a ceramic crucible filled with tellurium powder, seal the crucible and place it in the tube furnace. Under the protection of 100SCCM argon gas, the temperature was raise...

Embodiment 2

[0022] A preparation method of tungsten ditelluride nanotubes, comprising the following process steps:

[0023] 1) Spread 5g of tungsten hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore size of 100nm downwards on top of tungsten hexacarbonyl, seal the crucible and place it in a tube furnace, and feed it with 100 SCCM of argon Gas cleaning of the air in the furnace tubes. Under the protection of 100SCCM argon gas, raise the temperature to 50°C and keep it for 200min, then continue to raise the temperature to 300°C and keep it for 40min to obtain metal tungsten nanotube material, stop heating;

[0024] 2) After the tube furnace in step 1) is lowered to room temperature, take out the porous anodized aluminum template, place its opening downwards in a ceramic crucible filled with tellurium powder, seal the crucible and place it in the tube furnace. Under the protection of 100SCCM argon gas, the temperature was raised to 400°C...

Embodiment 3

[0027] A preparation method of tungsten ditelluride nanotubes, comprising the following process steps:

[0028] 1) Spread 5g of tungsten hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore diameter of 200nm downwards on top of tungsten hexacarbonyl, seal the crucible and place it in a tube furnace, and pass it into 10SCCM of argon Gas cleaning of the air in the furnace tubes. Under the protection of 10SCCM of argon gas, the temperature was raised to 150°C and kept for 30 minutes, and then the temperature was continued to be raised to 300°C and kept for 40 minutes to obtain metal tungsten nanotube materials, and the heating was stopped;

[0029] 2) After the tube furnace in step 1) is lowered to room temperature, take out the porous anodized aluminum template, place its opening downwards in a ceramic crucible filled with tellurium powder, seal the crucible and place it in the tube furnace. Under the protection of 10SCCM of ar...

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Abstract

The invention discloses a method for preparing tungsten ditelluride nanotubes. The method comprises the following steps: 1) laying tungsten hexacarbonyl to the bottom of a ceramic crucible, laying a porous anodic aluminum oxide mold plate with an opening facing downwards on the tungsten hexacarbonyl, sealing the ceramic crucible, putting into a tubular furnace, performing low-temperature sublimation deposition in the presence of a gas, and continuously performing heating pyrolysis; 2) cooling the vacuum tubular furnace to the room temperature, putting the mold plate with the opening facing downwards into a ceramic crucible with tellurium powder, sealing the ceramic crucible, heating in the presence of the gas, and enabling a single substance, namely tellurium, to react with a metal, namelytungsten, directly; 3) removing the excessive aluminum oxide mold plate and excessive tellurium by using a diluted acid solution, performing suction filtration treatment, and drying, thereby obtaining a finished product. The method disclosed by the invention is simple in step, free of environment pollution and free of complex equipment, a tungsten ditelluride nanotube powder material prepared byusing the method is good in size controllability, good in crystallinity and uniform in nanotube wall and morphology, and thus the comprehensive properties of a finished product of the tungsten ditelluride nanotube powder material are greatly improved. The method is wide in applicability and beneficial to large-scale industrial production.

Description

technical field [0001] The invention relates to the field of semiconductor nanomaterials, in particular to a method for preparing semiconductor nanotubes. Background technique [0002] Tungsten ditelluride (WTe 2 ) is a transition metal chalcogenide with a layered structure. In its orthorhombic unit cell, the tungsten chains are distributed one-dimensionally along the a-axis direction of the tellurium layer. It is a non-magnetic semi-metallic material. In 2014, Professor Cava's research group at Princeton University discovered WTe 2 It has unsaturated large magnetoresistance (LMR) characteristics at normal pressure (Nature, 514 (2014) 205), that is, this material exhibits an unusually large positive resistance effect under a magnetic field, and it does not saturation. This characteristic not only provides potential for its application in electronic devices, but also opens up a new direction for the research of large magnetoresistance materials. In 2015, scientists from t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y40/00
CPCB82Y40/00C01B19/007C01P2004/13
Inventor 胡柱东林海敏
Owner FOSHAN UNIVERSITY