Vacuum chuck and process chamber
A vacuum chuck and vacuum channel technology, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of substrate damage, waste film, and affecting the life of vacuum chuck 103, so as to improve the life , to avoid pollution, to avoid the effect of substrate damage or waste film
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Embodiment 1
[0029] figure 2 A schematic structural diagram of a chemical vapor deposition device for applying a vacuum chuck provided by an embodiment of the present invention; image 3 for figure 2 Enlarged view of Zone I in Middle; see also figure 2 and image 3 , the vacuum chuck provided by the embodiment of the present invention is placed in the chamber 101, the vacuum chuck is used to carry the substrate S, a vacuum channel (not shown in the figure) is arranged in the vacuum chuck, and an edge is also arranged in the vacuum chuck. channel 30; wherein, the inlet of the edge channel 30 is connected to the purge gas source (not shown in the figure), the gas outlet of the edge channel 30 is arranged near the edge position of the substrate S, and the blowing provided by the purge gas source The sweeping gas sweeps the edge of the substrate S from the gas outlet at a preset pressure; the preset pressure is greater than the pressure in the environment above the substrate S.
[0030]...
Embodiment 2
[0042] Embodiment 2 of the present invention provides a process chamber, such as figure 2 As shown, a vacuum chuck for carrying the substrate is arranged therein, and the vacuum chuck adopts the vacuum chuck provided by the above-mentioned embodiment 2 of the present invention.
[0043] Specifically, the process chamber includes a chemical vapor deposition chamber.
[0044] The process chamber provided by the present invention adopts the vacuum chuck provided above in the present invention, therefore, not only can avoid substrate damage or waste, but also can improve the service life of the reaction chamber.
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