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Vacuum chuck and process chamber

A vacuum chuck and vacuum channel technology, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of substrate damage, waste film, and affecting the life of vacuum chuck 103, so as to improve the life , to avoid pollution, to avoid the effect of substrate damage or waste film

Inactive Publication Date: 2018-05-01
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, it is found in practical applications that the process gas will not only react and adhere to the substrate S, but also on the vacuum chuck 103 and the gap between the vacuum chuck 103 and the substrate S, and even on the substrate S. Reaction or deposition on the back side, thereby affecting the life of the vacuum chuck 103 and causing substrate damage or even waste

Method used

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  • Vacuum chuck and process chamber
  • Vacuum chuck and process chamber
  • Vacuum chuck and process chamber

Examples

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Embodiment 1

[0029] figure 2 A schematic structural diagram of a chemical vapor deposition device for applying a vacuum chuck provided by an embodiment of the present invention; image 3 for figure 2 Enlarged view of Zone I in Middle; see also figure 2 and image 3 , the vacuum chuck provided by the embodiment of the present invention is placed in the chamber 101, the vacuum chuck is used to carry the substrate S, a vacuum channel (not shown in the figure) is arranged in the vacuum chuck, and an edge is also arranged in the vacuum chuck. channel 30; wherein, the inlet of the edge channel 30 is connected to the purge gas source (not shown in the figure), the gas outlet of the edge channel 30 is arranged near the edge position of the substrate S, and the blowing provided by the purge gas source The sweeping gas sweeps the edge of the substrate S from the gas outlet at a preset pressure; the preset pressure is greater than the pressure in the environment above the substrate S.

[0030]...

Embodiment 2

[0042] Embodiment 2 of the present invention provides a process chamber, such as figure 2 As shown, a vacuum chuck for carrying the substrate is arranged therein, and the vacuum chuck adopts the vacuum chuck provided by the above-mentioned embodiment 2 of the present invention.

[0043] Specifically, the process chamber includes a chemical vapor deposition chamber.

[0044] The process chamber provided by the present invention adopts the vacuum chuck provided above in the present invention, therefore, not only can avoid substrate damage or waste, but also can improve the service life of the reaction chamber.

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PUM

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Abstract

The invention provides a vacuum chuck and a process chamber. The vacuum chuck is used for bearing a substrate, a vacuum channel is formed in the vacuum chuck, and an edge channel is further formed inthe vacuum chuck; an air inlet of the edge channel is connected with a purging air source, an air outlet of the edge channel is formed in the position close to the edge position of the substrate, andpurging air provided by the purging air source purges the edge of the substrate in a preset air pressure; and the preset air pressure is greater than the air pressure in the environment above the substrate. According to the vacuum chuck, damage to the substrate or occurrence of scrap substrates can be avoided, contamination of the vacuum chuck can further be avoided to a certain extent, and the life of the vacuum chuck is prolonged accordingly.

Description

technical field [0001] The invention belongs to the technical field of semiconductor equipment manufacturing, and in particular relates to a vacuum chuck and a process chamber. Background technique [0002] In the manufacturing process of an integrated circuit (IC), especially in a chemical vapor deposition (CVD) process, in order to avoid movement or dislocation during the process, a vacuum chuck (Vacuum Chuck) is often used. The vacuum chuck uses vacuum force to fix the substrate. The pressure above the vacuum chuck is the chamber pressure P1, and the bottom is the back blowing pressure P2. It should be ensured that P1>P2 can ensure the substrate is fixed. The vacuum fixing method is the same as the mechanical method. It has the following advantages: first, it can avoid irreparable damage to the substrate due to mechanical reasons such as pressure and collision; second, it can increase the effective processing area of ​​the substrate; third, it can reduce particle pollu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458
CPCC23C16/4581
Inventor 张军郑波马振国吴鑫文莉辉
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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