Cleaning method of chemically and mechanically grinded polycrystalline silicon

A chemical-mechanical and cleaning agent technology, used in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as damage and polysilicon surface roughening, reduce damage, improve cleaning effects, and save costs. Effect

Inactive Publication Date: 2018-05-04
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0012] But in above-mentioned cleaning process, because hydrofluoric acid can destroy the silicon oxide layer that forms in the step (1) and plays a certain protective effect to polysilicon, thereby make in step (3) the surface of polysilicon is directly exposed under the ammoniacal liquor environment, and then Lead to roughness of the polysilicon surface (Roughness) or even damage (Damage)

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  • Cleaning method of chemically and mechanically grinded polycrystalline silicon
  • Cleaning method of chemically and mechanically grinded polycrystalline silicon
  • Cleaning method of chemically and mechanically grinded polycrystalline silicon

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Embodiment Construction

[0033] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0034] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as ch...

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Abstract

The invention provides a cleaning method of chemically and mechanically grinded polycrystalline silicon. The cleaning method is characterized by including the steps: cleaning particulate matters; firstly brushing surfaces of wafers by matching ammonium hydroxide serving as a cleaning agent with a brush (Brush 1); secondly brushing the surfaces of the wafers by matching hydrofluoric acid solution serving as a cleaning agent with a brush (Brush 2). Brushing process orders in a conventional cleaning process are adjusted, a brushing procedure of the hydrofluoric acid solution has obvious destructive effect on silicon oxide and is postponed, the working procedure is adjusted, so that the surface of the polycrystalline silicon can be protected by a silicon oxide layer generated in the cleaning process of the particulate matters when being brushed by the ammonium hydroxide, roughened damage to the surface of the polycrystalline silicon caused by corrosion of the ammonium hydroxide is avoided,flow of the hydrofluoric acid solution is decreased in the brushing process of the hydrofluoric acid solution, the hydrofluoric acid solution is decreased, cost is saved, and damage of the hydrofluoric acid solution to the surface of the polycrystalline silicon can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a cleaning method after chemical mechanical polishing of polysilicon in the manufacturing process of a 3D NAND flash memory structure. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar flash memory and to seek lower production costs per unit storage unit, various three-dimensional (3D) flash memory structures have emerged, such as 3D NOR (3D or not) flash memory and 3D NAND (3D NAND) flash memory. [0003] At the same time, in order to improve the performance of three-dimensional (3D) flash memory, the size of thre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L27/11524H01L27/11551H01L27/1157H01L27/11578
CPCH01L21/02057H01L21/02082H10B41/35H10B41/20H10B43/35H10B43/20
Inventor 周小红闵源周小云蒋阳波
Owner YANGTZE MEMORY TECH CO LTD
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