Unlock instant, AI-driven research and patent intelligence for your innovation.

Temperature sensor integrated SiC MOSFET device

A technology of temperature sensor and temperature sensor, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of device reliability and life reduction, and achieve the effect of simple process

Inactive Publication Date: 2018-05-04
BEIJING CENTURY GOLDRAY SEMICON CO LTD
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In general, the specifications of semiconductor devices strictly stipulate the maximum junction temperature of the device. Exceeding the specified maximum junction temperature will lead to a sharp decline in the reliability and life of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Temperature sensor integrated SiC MOSFET device
  • Temperature sensor integrated SiC MOSFET device
  • Temperature sensor integrated SiC MOSFET device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0018] This application adopts the method of embedding a lateral Schottky diode on the surface of the chip. According to the law of the Schottky current changing with temperature, the theoretical basis for obtaining the real-time temperature monitoring value is as follows:

[0019] Theoretically, when the voltage is less than the potential barrier, the on-resistance in the drift region can be ignored, and the relationship between the current and voltage of the Schottky diode is as follows:

[0...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a temperature sensor integrated SiC MOSFET device. In an active region of the SiC MOSFET device, an area a is selected to serve as a gate electrode pressure block area, anotherarea b is selected to serve as an embedded transverse Schottky diode area; source electrode pressure blocks are positioned on primitive cells in areas, except for the area a and the area b, of the active region and isolated from grid electrodes through interlayer dielectric; a source electrode, a gate electrode and the embedded transverse Schottky diode area for detecting the temperature of the SiC MOSFET device are isolated from one another; the embedded transverse Schottky diode area serves as a chip temperature sensor to detect the chip junction temperature in real time through connectionof an external circuit. By surface embedding of transverse Schottky diodes, real-time temperature monitoring values can be obtained according to a change rule of transverse Schottky diode current along with the temperature. The SiC Schottky diodes are resistant to temperature higher than 300 DEG C, so that applicability to high-temperature SiC devices is realized. In addition, a process is simpleand compatible to a SiC MOSFET device.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a SiC MOSFET device integrating a temperature sensor. Background technique [0002] After years of research on SiC MOSFET, JFET, BJT, IGBT and other transistor devices, some manufacturers have taken the lead in launching commercial products, and they have been widely used in industry. [0003] In general, the specifications of semiconductor devices strictly stipulate the maximum junction temperature of the device. Exceeding the specified maximum junction temperature will lead to a sharp decline in the reliability and life of the device. In the actual application of the device, the junction temperature will be strictly controlled to make the device work below the specified maximum junction temperature, so as to ensure the stable and reliable operation of the device and system. Therefore, it is very necessary to monitor the junction temperature of the device during operat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544
CPCH01L22/34
Inventor 倪炜江李百泉
Owner BEIJING CENTURY GOLDRAY SEMICON CO LTD