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Apparatus and method for plasma processing a wafer

A plasma and processing device technology, applied in the field of plasma processing devices, can solve problems such as heating takes a long time, prolonging the process cycle, etc.

Active Publication Date: 2020-09-01
CENTROTHEM PHOTOVOLTAICS AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the temperature at the outer plate can be reached fairly quickly, the heating of the inner plate and thus the inner wafer can sometimes take a considerable amount of time, which prolongs the process cycle

Method used

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  • Apparatus and method for plasma processing a wafer
  • Apparatus and method for plasma processing a wafer
  • Apparatus and method for plasma processing a wafer

Examples

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Embodiment Construction

[0042] Use of the terms "above", "below", "left" and "right" in the description refers to the drawings and is not intended to be limiting. However, they may describe preferred embodiments. The term "substantially" in relation to parallel, vertical or angular measurements shall encompass a deviation of ±3°, preferably ±2°. In the following description, the term "wafer" will be used for disc-shaped substrates, preferably semiconductor wafers for semiconductor or photovoltaic applications, but substrates made of other materials may also be provided and processed.

[0043] In the following description, reference will be made to Figure 1 to Figure 3 To more carefully describe the basic structure of the wafer boat 1 used in the plasma processing apparatus, wherein figure 1 shows a schematic side view of wafer boat 1, and figure 2 and image 3 Top and front views are shown. In the drawings, the same reference numbers will be used because they describe the same or similar eleme...

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Abstract

The present invention relates to a plasma processing device for a substrate and a method for plasma processing a wafer, which can achieve a good homogeneous gas distribution in a processing chamber. The device includes: an elongated processing chamber having an accommodating space for accommodating a wafer boat capable of accommodating multiple wafers; at least one gas guiding duct extending in the lengthwise direction of the processing chamber and arranged on one side of the accommodating space ; and at least one gas guiding duct extending in the lengthwise direction in the processing chamber and arranged on the other side of the accommodating space. Each of the air guiding ducts has a plurality of passage ports for the passage of gas, the passage ports are spaced apart in the length direction of the air guiding ducts, and the passage ports are formed on the sides of the air guiding ducts facing the accommodation space. Furthermore, at least one air supply unit and at least one exhaust unit are provided, wherein at least one air supply unit is connectable to at least one air-conducting duct and at least one exhaust unit is connectable to another air-conducting duct.

Description

technical field [0001] The present invention relates to a device and method for plasma treatment of wafers, which are suitable for generating plasma between wafers. Background technique [0002] In semiconductor and solar cell technology, it is well known that disc-shaped substrates (hereinafter referred to as wafers, regardless of their geometry and material) made of various materials are subjected to various processes . [0003] In this regard, wafers are often subjected to single treatment processes as well as batch processes, that is, processes in which several wafers are processed simultaneously. For single processes as well as for batch processes, the wafers have to be moved into the desired processing position in each case. In batch processes, this is usually achieved by placing the wafers in so-called boats, which have space for multiple wafers. In a boat, the wafers are usually placed parallel to each other. Such boats can be constructed in a variety of differen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/3244H01L21/67017
Inventor 麦可·科利克拉尔夫·罗特韦费德·莱尔希约翰尼斯·雷利
Owner CENTROTHEM PHOTOVOLTAICS AG