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An ultra-short channel based on polystyrene beads and its preparation method

A polystyrene ball and ultra-short channel technology, which is applied in the field of nanotechnology and semiconductor, can solve the problems of substrate pollution, poor repeatability, and difficulty in meeting the needs of ultra-short channel transistors, and achieves low cost, The process steps are simple and the effect of good practical value

Active Publication Date: 2020-01-17
BEIJING UNIV OF TECH
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Problems solved by technology

With the development of semiconductor technology, the size limit of photolithography transfer pattern has been reduced by 2 to 3 orders of magnitude (from millimeter to submicron level), but the size and shape of the pattern are limited by the natural masking layer, and the repeatability is not good. Pattern transfer needs to re-lay the natural masking layer, which will pollute the substrate, so it is far from meeting the development trend of the chip industry, and it is difficult to meet the current needs of ultra-short channel transistors

Method used

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  • An ultra-short channel based on polystyrene beads and its preparation method
  • An ultra-short channel based on polystyrene beads and its preparation method
  • An ultra-short channel based on polystyrene beads and its preparation method

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Embodiment 1

[0030] Embodiment 1, a novel ultra-short channel preparation method based on polystyrene beads, is characterized in that, proceed as follows:

[0031] (1) On a single crystal silicon wafer substrate with a clean 300nm oxide layer on the surface, fix the mechanical mask with high-temperature adhesive tape, and use electron beams to vapor-deposit metal Ti with a thickness of 10nm and metal Au with a thickness of 80nm in sequence to obtain Ti / Au metal layer pattern to obtain a pattern with a grid length and width of 150um; remove the template;

[0032] (2) On the Ti / Au metal layer, aluminum oxide with a thickness of 30nm is deposited by atomic layer;

[0033] (3) First, clean the glass slide with acetone, absolute ethanol, and deionized water for 10 minutes, blow dry with nitrogen, and use oxygen plasma to etch the glass slide for hydrophilic treatment. The power is 70W, and the oxygen flow rate is 20sccm. The etching time is 2 minutes, according to the ratio of 5% PS pellets: ...

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Abstract

A polystyrene sphere-based ultrashort channel and a preparation method thereof relates to the technical field of nanometer and semiconductors. By a single-layer and self-assembly polystyrene sphere, aluminum oxide with a controllable growth thickness is deposited on an atomic layer, and the ultrashort channel with sub-ten-nanometer length can be obtained. The process is simple in step and low in cost, and has relatively good practical value, and the ultrashort channel is easy to prepare on a large scale.

Description

technical field [0001] The invention relates to the field of nanotechnology and the field of semiconductor technology, in particular to a novel ultra-short channel based on polystyrene beads and a preparation method, which can realize a channel length of sub-ten nanometers. Background technique [0002] With the development of semiconductor technology, the critical dimension or minimum feature size of semiconductor components has also become smaller than before. Gordon Moore, the founder of Intel, once predicted the development of the semiconductor industry. More and more micro-devices can be accommodated on integrated circuits, and the performance will also improve. The prerequisite for Moore's Law to take effect is that devices can continue to be miniaturized, that is, the channel length of devices continues to shrink. [0003] For the current photolithography is an important technology in the manufacturing process of semiconductor devices. This technology uses exposure a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04B82Y10/00
CPCB82Y10/00H01L21/04
Inventor 张永哲申高亮严辉李黄经纬李松宇刘北云庞玮李景峰王光耀陈永锋邓文杰
Owner BEIJING UNIV OF TECH