Method for reducing irradiation damage based on dislocation

Abstract

The invention discloses a method for reducing irradiation damage based on dislocation. The method mainly comprises the following steps of injecting protons, neutrons, gamma rays and other high-energyparticles for a silicon material and a device and carrying out annealing operation, so that the purpose of reducing irradiation damage due to the fact that dislocation with controllable density and controllable position serves as a composite center can be achieved. According to the invention, dislocation is introduced at the specified positions of the silicon material and the device, and dislocation density and dislocation area can be controlled. The dislocation is introduced into the silicon material and the device through irradiation of the high-energy particles to form defects, similar to acomposite center, so that the service life of the carriers is reduced. A large amount of electron-cavity generated in the irradiation process can be compounded by the composite center, so that the number of cavities captured by cavity traps is greatly reduced. Compared with the prior art, the method is advantageous in that for the introduced dislocation, high-energy particles may not affect the electric neutral characteristic of the silicon material and the device, and the irradiation damage of the silicon material and the device is also reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for reducing radiation damage based on dislocations. Background technique [0002] When silicon materials and devices continue to work in an ionizing radiation environment, the ionizing radiation will excite electron-hole pairs in the silicon body, and the holes will be captured by hole traps and become fixed space positive charges, resulting in the accumulation of positive charges. When the positive charge accumulates to a certain extent, the leakage current of the device will increase, the electrical characteristic parameters will drift, and eventually fail. [0003] At present, the methods of introducing dislocations into silicon mainly include: plastic deformation, which is a relatively common method at present, the introduction of dislocation density is high, but it is destructive, and the position and density of dislocations cannot be controlled...

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Problems solved by technology

[0003] At present, the methods of introducing dislocations into silicon mainly include: plastic deformation, which is a relatively common method at present, the introduction of dislocation density is high, but it is destructive, and the position and density of dislocations cannot be controlled; the introduction of oxygen precipitation, this method requires Longer time heat treatment, it is difficult to introduce dislocations and the dislocation position is uncontrollable; ion implantation, the equipment required for this method is relatively expensive, and the requirements for subsequent thermal care conditions for forming dislocations are relatively strict; laser irradiation, the dislocations introduced by this method Errors only exist on the laser-irradiated surface and cannot be generated inside the material

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