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A programmable memory cell and its control method

A technology of storage unit and control gate, which is applied in the field of memory, can solve the problems of stored data loss, electronic loss, etc., and achieve the effects of not being easy to lose, solving easy loss, and improving data stability

Active Publication Date: 2020-08-14
SHENZHEN STATE MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, under the radiation effect of the existing EEPROM memory cells, the stored electrons in the EEPROM structure are easy to get rid of the shackles of the gate oxide layer, resulting in the loss of electrons stored on the floating gate, resulting in the loss of stored data

Method used

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  • A programmable memory cell and its control method
  • A programmable memory cell and its control method
  • A programmable memory cell and its control method

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Embodiment Construction

[0030] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0031] A programmable memory cell, comprising a bit line BL, a word line WL, a substrate, a storage transistor formed on the substrate and a selection transistor, the storage transistor is a floating gate transistor, and the source of the selection transistor is connected to the drain of the storage transistor , the gate of the selection transistor is connected to the word line WL, the drain of the selection transistor is connected to the bit line BL, and the programmable memory cell also includes a programmable connection structure in contact with the floating gate of the floating gate transistor, and the programmable connection structure is used in When programming the programmable memory cell, the programming voltage is received and input into the floating gate, and under the action of the programming vo...

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Abstract

The invention discloses a programmable storage unit and its control method. The invention sets a programmable connection structure. After writing information, the programmable connection structure receives the programming voltage and inputs it into the floating gate, and the programming voltage Under the action of the floating gate transistor, a resistor is formed to solve the technical problem that the data stored in the existing memory is easily lost, improve the data stability of the storage unit, and ensure that the data is not easily lost.

Description

technical field [0001] The invention relates to the field of memory, in particular to a programmable memory unit and a control method thereof. Background technique [0002] At present, in the irradiated environment of the existing EEPROM, a single space high-energy charged particle hits the sensitive part (floating gate) of the microelectronic device, and the atoms or molecules that lose electrons become positively charged ions, thus generating electron-holes. Yes; when free electrons have sufficient energy, they will collide with other neutral atoms or molecules in the material to generate new electron-hole pairs. Generally, charged particles pass through various substances, and as long as the energy loss is greater than 30 electron volts, a pair of electron-hole pairs can be generated. These excess electron-hole pairs cause ionization damage. Due to ionization, additional charges are generated, which changes the logic state of the device. That is, under the radiation eff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11521G11C16/08G11C16/10G11C16/24
CPCG11C16/08G11C16/10G11C16/24H10B41/30
Inventor 杜明谢文刚裴国旭刘云龙曾嘉兴李晓辉邹黎吕明
Owner SHENZHEN STATE MICROELECTRONICS CO LTD
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