Level conversion circuit, integrated circuit chip and electronic device

A technology for converting circuits and levels, applied in logic circuits, logic circuit connection/interface layout, logic circuit coupling/interface using field effect transistors, etc., can solve problems such as easy circuit failure and PMOS tube failure

Active Publication Date: 2018-05-18
上海顺久电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the application provides a level conversion circuit, an integrated circuit chip and electronic equipment to solve the problem that the PMOS tube cannot conduct current when the source voltage of the PMOS tube in the CMOS inverter is low in the existing level conversion circuit. The problem that the circuit is prone to failure

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  • Level conversion circuit, integrated circuit chip and electronic device
  • Level conversion circuit, integrated circuit chip and electronic device
  • Level conversion circuit, integrated circuit chip and electronic device

Examples

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Embodiment Construction

[0040] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with aspects of the present application as recited in the appended claims.

[0041] The terminology used in this application is for the purpose of describing particular embodiments only, and is not intended to limit the application. As used in this application and the appended claims, the singular forms "a", "the", and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should also be understood that the term...

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Abstract

The invention provides a level conversion circuit, an integrated circuit chip and an electronic device. The level conversion circuit comprises an inverter unit, a first NMOS transistor and a second NMOS transistor, the inverter unit comprises a power input end used for receiving a first voltage; a signal input end used for receiving a pulse signal having a logic high level equal to the first voltage; an inverted output end; the drain of the first NMOS transistor is for receiving a second voltage, and the gate is connected with an in-phase output end; the gate of the second NMOS transistor is connected with the inverted output end, and the source is grounded; and a voltage difference between the first voltage and the logic low level in the pulse signal is greater than a threshold voltage ofthe PMOS transistor in the inverter unit, and the difference between the first voltage and the second voltage is greater than the threshold voltage of the first NMOS transistor. Compared with the prior art, no matter how low the second voltage is, the MOS transistors in the level conversion circuit provided by the invention can be rapidly turned on, and the circuit can work normally and effectively.

Description

technical field [0001] The present application relates to the technical field of integrated circuits, in particular to a level conversion circuit, an integrated circuit chip and electronic equipment. Background technique [0002] In a modern integrated circuit system, in order to obtain a high-speed working state, its core logic unit is usually designed to work at a low voltage, such as 0.9V, 0.7V or 0.6V, and its input unit is usually designed at a high voltage based on stability considerations work with, for example, 3.3V, 2.5V, or 1.8V. In this way, due to the difference in operating voltage, a level conversion circuit needs to be designed between the input unit and the core logic unit. [0003] The existing level conversion circuit usually includes two CMOS inverters connected in series in sequence, and the source of the PMOS transistor in each CMOS inverter is used to receive the above-mentioned low voltage. In addition, in order to enable the first CMOS inverter to w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/0185H03K19/017
CPCH03K19/017H03K19/018507
Inventor 朱仁波温带豪
Owner 上海顺久电子科技有限公司
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