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Planar avalanche photodiode

An avalanche photoelectric and diode technology, applied in the field of photodetectors, can solve problems such as difficult diffusion structures and insufficient diffusion of n-dopants

Inactive Publication Date: 2018-05-25
PICOMETRIX
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  • Abstract
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  • Application Information

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Problems solved by technology

However, in InAlAs, it is even more difficult to obtain a diffuse structure, since the larger electron avalanche coefficient (relative to holes) makes it desirable to multiply electrons rather than holes compared to standard InP-based APDs
Furthermore, simply inverting the standard p-dopant diffusion structure is not sufficient because n-dopants do not diffuse fast enough

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Embodiment Construction

[0015] U.S. Patent No. 7,348,608 (the entire content of which is incorporated herein by reference) contains several innovations, including: the multiplication layer is buried under the absorber layer; due to the concentration of the electric field under the small mini-mesa, the p+ charge control layer extends across the entire Large external mesa without increasing capacitance at operating bias or reducing bandwidth at operating bias; absorber layer grown on top of charge control layer as well as on multiplication layer; all of these layers have complete large area of ​​external mesa; and The small top p+ mini-mesa determines the active area and capacitance and bandwidth.

[0016] In US Patent No. 7,348,608, the entire contents of which are incorporated herein by reference, the InGaAs absorber layer is undoped so as to be depleted under operating bias. The charge control layer and multiplication layer are also fully depleted under the operating bias. Thus, the small top p+ mi...

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Abstract

An avalanche photodiode includes a first semiconductor layer, a multiplication layer, a charge control layer, a second semiconductor layer, a graded absorption layer, a blocking layer and a second contact layer. The multiplication layer is located between the charge control layer and the first semiconductor layer. The charge control layer is located between the second semiconductor layer and the multiplication layer. The second semiconductor layer is located between the charge control later and the graded absorption layer. The graded absorption layer is located between the second semiconductorlayer and the blocking layer.

Description

[0001] This application is a divisional application of a Chinese invention patent application with an application date of May 17, 2013, an application number of 201380025871.2, and an invention title of “Planar Avalanche Photodiode”. [0002] Cross References to Related Applications [0003] This application claims priority from US Provisional Patent Application 61 / 648,401, the entire contents of which are incorporated herein by reference. Background technique [0004] The invention relates to a photodetector. More specifically, the present invention relates to an avalanche photodiode ("APD"). [0005] Due to the known interactions between photons and electrons, advances have been made in recent years in the field of photodetectors, particularly those utilizing semiconductor materials. One type of semiconductor-based photodetector known as an avalanche photodiode includes a variety of semiconductor materials for different purposes such as absorption and multiplication. [0...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107
CPCH01L31/1075H01L31/02161H01L31/03042H01L31/03046Y02E10/544
Inventor 巴里·莱维尼
Owner PICOMETRIX