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phase change electronics

An electronic device, phase change technology, applied in electrical components, magnetic field controlled resistors, parts of electromagnetic equipment, etc.

Active Publication Date: 2019-07-09
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] All of the above methods are limited to the regulation between two phases
In the traditional scheme, there is no hydrogen-containing transition metal oxide that can realize three-phase change, and the phase-change electronic device corresponding to the three-phase phase change realized by the electric field regulation of the hydrogen-containing transition metal oxide

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Embodiment Construction

[0040]In order to make the purpose, technical solution and advantages of the present invention clearer, the phase-change electronic device of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0041] See figure 1 , an embodiment of the present invention provides a method for regulating the phase transition of a hydrogen-containing transition metal oxide, which specifically includes the following steps:

[0042] S100, providing a structural formula of ABO x h y A hydrogen-containing transition metal oxide, the hydrogen-containing transition metal oxide is in the first phase, wherein A is one or more of alkaline earth metal elements and rare earth metal elements, and B is one of transition group metal elements or Various, the value range of x is 1-3, ...

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Abstract

A phase-change electronic device, characterized in that it includes: a first conductive layer; a second conductive layer arranged opposite to the first conductive layer; a phase-change material layer arranged between the first conductive layer and the Between the second conductive layer and electrically connected with the second conductive layer, the phase change material layer is ABO x h y A hydrogen-containing transition metal oxide, wherein A is one or more of alkaline earth metal elements and rare earth metal elements, B is one or more of transition group metal elements, the value range of x is 1-3, and y The value range of is 0-2.5; the ionic liquid layer is arranged between the phase change material layer and the first conductive layer, and the ionic liquid layer can provide hydrogen ions and oxygen ions.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a phase change electronic device realized by regulating the phase change of a hydrogen-containing transition metal oxide by an electric field. Background technique [0002] Traditional methods of hydrogenating oxides are usually achieved thermally, such as through some hydrides (CaH 2 , NaH) to reduce the oxide. These H ions will replace O in oxides to form H-M bonds (M: transition metal). Since H-M bonds are shorter than M-O, these hydrogenated oxides are characterized by a decrease in lattice volume. The hydrogenation of transition metal oxides can firstly change its structural phase; secondly, it will change the electrical or magnetic properties of the material along with the doping of electrons or holes. In addition, the oxygen in the oxide is sometimes taken away during the hydrogenation process, and it becomes some oxygen-deficient phases. By the method of hydrothermal...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H10B99/00
CPCH10N70/231H10N70/801H10N70/883H10N50/85G02F1/1524H10N70/24H10N50/10H10N70/8836G02F1/1525G02F1/155H10N50/01H10N50/80H10N70/00H10N70/021H10N70/826H10N70/841
Inventor 于浦鲁年鹏吴健周树云
Owner TSINGHUA UNIV