A perovskite solar cell with composite electron transport layer structure

A technology of electron transport layer and solar cell, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as rapid decomposition of perovskite and interface charge recombination, solve interface instability, improve battery performance and stability, high efficiency effect

Active Publication Date: 2020-01-14
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is serious interfacial charge recombination at the ZnO / perovskite interface, and literature reports (Chem.Mater.2015, 27, 4229) found that: 3 Methylammonium cation MA in perovskite at the interface + It is easy to be deprived of protons by ZnO to release methylamine MA, resulting in rapid decomposition of perovskite

Method used

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  • A perovskite solar cell with composite electron transport layer structure
  • A perovskite solar cell with composite electron transport layer structure
  • A perovskite solar cell with composite electron transport layer structure

Examples

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Embodiment 1

[0028] The perovskite solar cell of the present invention comprises a transparent conductive substrate, a composite electron transport layer, a perovskite absorbing film layer, a hole transport layer and a back electrode stacked in sequence. The perovskite solar cell with this structure can form reasonable energy level matching and conduct charge effectively.

[0029] Preferably, the perovskite film layer of the present invention is MAPbI 3 . MAPbI 3 The thin film has high quality, good energy level matching and low cost.

[0030] Preferably, the hole transport layer material is spiro-OMeTAD. spiro-OMeTAD has a good energy level match with the perovskite film layer, and can effectively transport holes to the back electrode layer, thereby ensuring high photoelectric conversion efficiency.

[0031] The preparation method of this embodiment is:

[0032] The cut 2.0cm×2.0cm transparent conductive substrate FTO was etched with zinc powder and 40mmol / L hydrochloric acid to obta...

Embodiment 2

[0036] The perovskite solar cell of the present invention comprises a transparent conductive substrate, a composite electron transport layer, a perovskite film layer, a hole transport layer and a back electrode stacked in sequence. The perovskite solar cell with this structure can form reasonable energy level matching and conduct charge effectively.

[0037] Preferably, the perovskite film layer of the present invention is MAPbI 3 . MAPbI 3 The thin film has high quality, good energy level matching and low cost.

[0038] Preferably, the hole transport layer material is spiro-OMeTAD. spiro-OMeTAD has a good energy level match with the perovskite film layer, and can effectively transport holes to the back electrode layer, thereby ensuring high photoelectric conversion efficiency.

[0039] The preparation method of this embodiment is:

[0040] The cut 2.0cm×2.0cm transparent conductive substrate FTO was etched with zinc powder and 40mmol / L hydrochloric acid to obtain the des...

Embodiment 3

[0044] The perovskite solar cell of the present invention comprises a transparent conductive substrate, a composite electron transport layer, a perovskite film layer, a hole transport layer and a back electrode stacked in sequence. The perovskite solar cell with this structure can form reasonable energy level matching and conduct charge effectively.

[0045] Preferably, the perovskite film layer of the present invention is MAPbI 3 . MAPbI 3 The thin film has high quality, good energy level matching and low cost.

[0046] Preferably, the hole transport layer material is spiro-OMeTAD. spiro-OMeTAD has a good energy level match with the perovskite film layer, and can effectively transport holes to the gold electrode layer, thereby ensuring high photoelectric conversion efficiency.

[0047] The preparation method of this embodiment is:

[0048] The cut 2.0cm×2.0cm transparent conductive substrate was etched with zinc powder and 40mmol / L hydrochloric acid to obtain the designe...

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Abstract

A perovskite solar cell with a composite electron transport layer structure relates to a perovskite solar cell. There is a conductive substrate, a composite electron transport layer, a perovskite film layer, a hole transport layer and a back electrode stacked in sequence; the composite electron transport layer is composed of zinc oxide, magnesium oxide and protonated ethanolamine; the perovskite film layer The chemical formula is ABX 3 , A is positive monovalent ions methylammonium, formamidinium ammonium, Cs + , Rb + etc., B is positive divalent ion Pb 2+ , Sn 2+ 、 Ge 2+ At least one of etc., X is F ‑ , Cl ‑ 、Br ‑ , I ‑ at least one of these. ZnO has high electron mobility and has a higher electron mobility than TiO 2 Higher electron transport capability. ZnO surface-modified MgO can reduce the recombination of interfacial charges at the interface, and intramolecular protonated EA + Effective contact with perovskite can be achieved, the extraction speed of electrons can be accelerated, and the charges accumulated at the interface can be released.

Description

technical field [0001] The invention relates to a perovskite solar cell, in particular to a perovskite solar cell with a composite electron transport layer structure. Background technique [0002] Organometal halide perovskite solar cells have rapidly developed into one of the most promising candidates for the next generation of novel thin-film photovoltaic cells in just a few years. The current certified photoelectric conversion efficiency reaches 22.7%, which is almost close to the highest efficiency of silicon, the industry's flagship material. However, hysteresis issues, stability, and further efficiency improvements still limit the industrial application of perovskite solar cells. These issues may be related to incomplete contact between active layers and excessive interfacial charge recombination, because the commonly used hole Transport material organic semiconductors (such as spiro-OMeTAD) can form good interfacial contacts with perovskites. Therefore, solving the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44
CPCH10K30/10H10K30/80Y02E10/549
Inventor 郑南峰陈睿豪曹靖吴炳辉
Owner XIAMEN UNIV
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