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A kind of preparation method of nitrogen-doped graphene material based on diaminoazofurazan

A technology of diaminoazofuran and nitrogen-doped graphene, which is applied in the fields of graphene, chemical instruments and methods, nano-carbon, etc., and can solve problems such as limited application and difficult compounding of graphene materials

Active Publication Date: 2021-03-26
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a method for preparing nitrogen-doped graphene materials based on diaminoazofurazan, aiming to solve the problem that graphene materials are not easy to be combined with other materials, resulting in limited application

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  • A kind of preparation method of nitrogen-doped graphene material based on diaminoazofurazan
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  • A kind of preparation method of nitrogen-doped graphene material based on diaminoazofurazan

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preparation example Construction

[0017] Please refer to figure 1 , figure 1 A schematic flow diagram of a method for preparing a nitrogen-doped graphene material based on diaminoazofurazan is provided for an embodiment of the present invention, wherein the method includes:

[0018] Step 1. Disperse graphene in water, add diaminoazofurazan (DAAF) solution, heat at 50-70°C for 30-60min, cool down to 20-40°C, and dry to obtain graphene-coated DAAF co- Crystal;

[0019] Wherein, the mass ratio of graphene and DAAF is 1:1~10;

[0020] Step 2: Grinding the DAAF eutectic into powder and heating at 500-800°C for 3-5 hours to obtain a nitrogen-doped graphene material.

[0021] The preparation method of nitrogen-doped graphene material provided by the present invention uses DAAF to react with graphene to obtain graphene material with higher nitrogen-doped content. In this material, graphene is evenly coated on the surface of the DAAF crystal, without the use of additives such as adhesives, and the surface propertie...

Embodiment 1

[0029] Add 0.1 g of graphene with a sheet diameter of 0.2 μm to 25 ml of deionized water, stir magnetically at 600 r / min for 60 minutes, then place it in an ultrasonic disperser and ultrasonically for 60 minutes to obtain 4 mg / ml graphite Alkene solution.

[0030] Dissolve 0.8 g DAAF into 25 ml ethanol, add the above graphene solution, heat at 50 °C for 30 min, cool down to 20 °C, and dry for 48 h to obtain a graphene-coated DAAF eutectic.

[0031] The DAAF eutectic was ground into powder, heated to 500°C in a tube furnace, and kept for 3 hours to obtain a nitrogen-doped graphene material with a nitrogen content of 5.16%.

Embodiment 2

[0033] Add 0.1 g of graphene with a sheet diameter of 100 μm into 25 ml of deionized water, stir magnetically at 600 r / min for 60 minutes, then place it in an ultrasonic disperser, and ultrasonicate for 30 minutes to obtain 4 mg / ml graphene solution.

[0034] Dissolve 0.4g DAAF into 25ml ethanol, add the above graphene solution, heat at 70°C for 60 min, cool down to 40°C, and dry for 48h to obtain graphene-coated DAAF eutectic.

[0035] Grind the DAAF eutectic into powder, heat it in a tube furnace to 800°C, and keep it for 5 hours to obtain a nitrogen-doped graphene material with a nitrogen content of 4.29%.

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Abstract

An embodiment of the invention provides a preparation method of a nitrogen-doped graphene material based on DAAF (diaminoazofurazan) and relates to the technical field of material preparation. The method comprises steps as follows: graphene is dispersed in water, a DAAF ethanol solution is added, the mixture is heated at the temperature of 50-70 DEG C for 30-60 min, cooled to 20-40 DEG C and dried, and a graphene coated DAAF eutectic product is obtained, wherein the mass ratio of graphene to DAAF in the DAAF solution is 1:(1-10); the DAAF eutectic product is ground into powder, the powder is heated at the temperature of 500-800 DEG C for 3-5 h, and the nitrogen-doped graphene material is obtained. DAAF and graphene are used for a reaction, and the graphene material with higher nitrogen doping content is obtained. In the material, the surface of a DAAF crystal is uniformly coated with graphene, adhesives and other aids are not required, and the surface performance of the DAAF crystal isperfectly kept.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a preparation method of a nitrogen-doped graphene material based on diaminoazofurazan. Background technique [0002] Graphene (G) is a two-dimensional honeycomb lattice material formed by the close bonding of planar single-layer carbon atoms, with a thickness of about 0.35 nm, which is the thinnest two-dimensional material in the world. [0003] Graphene has no resistance for electrons to pass through, generates less heat, and has high electrical conductivity. It is the material with the best electrical conductivity known, and has unique properties. For example, the tensile strength can reach 130GPa; the carrier mobility can reach 15000-25000cm 2 / Vs (square centimeter per volt second), which can exceed 10 times that of silicon wafers; thermal conductivity can reach 5000 W / mK (watt per millithermal conductivity), which is 3 times that of diamond; it also...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194
CPCC01B2204/20
Inventor 卓海涛陈少军朱佳平
Owner SHENZHEN UNIV
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