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A kind of nitrogen-doped graphene and its preparation method and application

A nitrogen-doped graphene, nitrogen content technology, applied in the field of material science, can solve the problems of difficult electrode materials, poor conductivity, poor conductivity, etc., and achieves low equipment requirements, high nitrogen doping content, and high conductivity. Effect

Active Publication Date: 2019-05-14
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, although the graphene prepared by the redox method has a high specific surface area, its electrical conductivity is generally poor due to the introduction of functional groups, which limits its application.
[0005] In addition, carbon-nitrogen compounds with high nitrogen content, such as C 3 N 4 Although it has an ultra-high nitrogen content, it is a semiconductor (band gap ~ 2.4eV), which can be applied to photocatalysis, but it is difficult to be used as an electrode material for energy storage due to its poor conductivity.

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  • A kind of nitrogen-doped graphene and its preparation method and application
  • A kind of nitrogen-doped graphene and its preparation method and application
  • A kind of nitrogen-doped graphene and its preparation method and application

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preparation example Construction

[0035] In the present invention, the cyanamide compound can be purchased from commercial sources or prepared by itself. In one example, the preparation method of copper cyanamide includes: hydrolyzing cuprous chloride in ammonia water and reacting cyanamide, the particle size of copper cyanamide nanoparticles can be regulated by controlling the reaction conditions, and the specific control method can be adopted in the field known technology.

[0036]The above cyanamide compound needs to be dried at 120°C before use to fully remove the possible water vapor, and then placed in a quartz tube. Specifically, the dried cyanamide compound can be directly powdered or compressed into tablets, and the total weight should not exceed 1 g, so as to prevent the gas pressure generated by decomposition from being too high to cause the quartz tube to break. Add the cyanamide compound into the quartz tube with one end open, and vacuum seal the tube. In the present invention, the degree of vac...

Embodiment 1

[0056] (1) Take a certain amount of nickel hydrocyanamide (0.2g), grind the powder evenly in a mortar and press into tablets;

[0057] (2) Place hydrogen cyanamide nickel in a quartz tube with an open end, connect a vacuum pump to make the vacuum less than 10Pa, and then use a hydrogen-oxygen flame gun to melt and seal the open end of the quartz tube;

[0058] (3) Place the vacuum-tight quartz tube in a muffle furnace, raise the temperature from 30°C to 700°C at a rate of 1°C / min, and keep it warm for 2 hours, so that the cyanamide precursor is pyrolyzed to obtain nitrogen-doped graphene and complexes of transition metals;

[0059] (4) Take it out after cooling with the furnace, put the obtained compound into the etching solution of 1M dilute hydrochloric acid, remove the nickel metal particles, add deionized water to wash and suction filter until the filtrate is neutral, and dry to obtain the nitrogen Doped graphene, its structure is a bamboo-shaped tubular structure such as...

Embodiment 2

[0062] (1) Take a certain amount of nickel hydrocyanamide (0.2g), grind the powder evenly in a mortar and press into tablets;

[0063] (2) Place hydrogen cyanamide nickel in a quartz tube with an open end, connect a vacuum pump to make the vacuum less than 20Pa, and then use a hydrogen-oxygen flame gun to melt and seal the open end of the quartz tube;

[0064] (3) Place the vacuum-tight quartz tube in a muffle furnace, raise the temperature from 30°C to 800°C at a rate of 1°C / min, and keep it warm for 2 hours, so that the cyanamide precursor is pyrolyzed to obtain nitrogen-doped graphene and complexes of transition metals;

[0065] (4) Take it out after cooling with the furnace, put the obtained compound into the etching solution of 1M dilute hydrochloric acid, remove the nickel metal particles, add deionized water to wash and suction filter until the filtrate is neutral, and dry to obtain the nitrogen Doped graphene, its structure is a bamboo-shaped tubular structure, and th...

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Abstract

The invention relates to a nitrogen-doped graphene and its preparation method and application. The nitrogen content in the nitrogen-doped graphene is 5 to 50 at.%, preferably 10 to 15 at.%. This invention uses cyanamide compounds as precursors to prepare nitrogen-doped graphene, which not only has graphene and excellent conductivity, but also has ultra-high nitrogen doping content (up to 15 at.%, or even 45.4 at.%). It can be used in catalysts and catalyst carriers, supercapacitor electrode materials and the preparation of high-efficiency rechargeable batteries.

Description

technical field [0001] The invention belongs to the technical field of material science, and in particular relates to a method for preparing nitrogen-doped graphene from a cyanamide compound and an application thereof. Background technique [0002] Graphene material is a representative of the current emerging two-dimensional materials. It is a two-dimensional structure composed of carbon atoms arranged in a hexagonal grid. Its unique physical and chemical properties have attracted extensive research interest. Single-layer graphene has good electrical conductivity, and its carrier rate can reach 1.5×10 at room temperature 4 cm 2 / (V·S). At the same time, its thermal conductivity is excellent, with a thermal conductivity of 5000W / (m·K). Graphene has large specific surface area, high conductivity, and good chemical stability. These excellent properties make graphene and graphene-based materials have broad application prospects in energy storage, catalysis and other fields. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184H01G11/36B01J27/24B01J32/00
CPCH01G11/36B01J27/24C01P2002/82C01P2004/04C01P2004/03B01J35/33Y02E60/13
Inventor 黄富强徐吉健
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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