High-voltage withstanding PNP-type anti-backflow power driver and manufacturing method thereof

A manufacturing method and driver technology, applied in the fields of semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of low cost performance, low reliability, damage to power drivers or front-end circuits, etc., and achieve low cost and low cost. Inexpensive and easy to achieve

Inactive Publication Date: 2018-06-05
上海岭芯微电子有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The reason for the back-feeding current of the existing LDO power supply is usually the moment when the power supply is turned on and off. In practical applications, the output voltage will be higher than the input voltage for a short time. Piezocapacitor, the current will flow reversely from the output terminal to the input terminal, which may cause damage to the power driver or the front circuit
At present, the usual anti-backfeed method is to connect discrete components at the input end, and diodes or MOS tubes can be used. However, this method has low cost performance and low reliability. Therefore, how to design a high withstand voltage with its own current anti-backfeed function The power drive is an important issue

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage withstanding PNP-type anti-backflow power driver and manufacturing method thereof
  • High-voltage withstanding PNP-type anti-backflow power driver and manufacturing method thereof
  • High-voltage withstanding PNP-type anti-backflow power driver and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0035] like figure 1 As shown, a high withstand voltage PNP type anti-backfeed power driver, the power driver includes a PNP tube and a pull-up resistor, one end of the pull-up resistor is connected to the emitter of the PNP tube and the other end is connected to the PNP tube The base of the base is used to realize the potential pull-up of the base, the emitter of the PNP tube is the input terminal of the power driver, the base of the PNP tube is used as the control terminal of the power driver, and the power driver also includes an anti-backfeed diode, anti-backfeed The anode of the flooding diode is connected to the collector of the PNP tube, and the cathode of the anti-backfeeding diode is the output terminal of the power driver. figure 1 Among them, R is the pull-up resistor, D is the anti-backfeed diode, B is the base of the PNP tube, E is the emitter of the PNP tube, and C is the collector of the PNP tube. The PNP tube is a longitudinal PNP tube. The forward withstand ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a high-voltage withstanding PNP-type anti-backflow power driver and a manufacturing method thereof. The power driver comprises a PNP transistor and a pull-up resistor, whereinone end of the pull-up resistor is connected with the emitter of the PNP transistor and the other end is connected with the base of the PNP transistor, and thus, potential pull up of the base is realized; and the emitter of the PNP transistor is used as an input end of the power driver. The power driver also comprises an anti-backflow diode, the anode of the anti-backflow diode is connected withthe collector of the PNP transistor, and the cathode of the anti-backflow diode is used as an output end of the power driver. Compared with the prior art, the power driver provided in the invention has the advantages of simple structure, simple and convenient manufacturing process, good performance and low cost.

Description

technical field [0001] The invention relates to a power driver for external expansion and a manufacturing method thereof, in particular to a high withstand voltage PNP type anti-backfeed power driver and a manufacturing method thereof. Background technique [0002] With the continuous development and progress of power devices, application circuits are becoming more and more complex, and the requirements for control circuits and drive technology are also getting higher and higher. Although the efficiency of a single power device is improved and the control is simplified, the complexity of the circuit puts forward new requirements for users, so it is necessary to provide an integrated high-voltage withstand power driver. [0003] The basic working principle of LDO (low dropout linear regulator) is as follows: when the system is powered on, if the enable pin is at a high level, the circuit starts to start, the constant current source circuit provides bias for the entire circuit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/07H01L21/82
CPCH01L21/82H01L27/0783
Inventor 汪义曾蕴浩王炜
Owner 上海岭芯微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products