Photoelectric detector, manufacturing method thereof and photoelectric detector fabric

Abstract

The invention provides a photoelectric detector, a manufacturing method thereof and photoelectric detector fabric. The manufacturing method of the photoelectric detector comprises the steps of preparing graphene thin film and arranging the graphene thin film on a substrate, wherein the substrate is made of a light-transmitting and flexible material; forming a first electrode and a second electrodeon the graphene thin film; forming quantum point thin film between the first electrode and the second electrode, wherein the quantum point thin film is subjected to ligand exchange treatment. By means of the photoelectric detector, the manufacturing method thereof and the photoelectric detector fabric, the quantum point thin film is located on the graphene thin film, carriers generated by an illumination response of the quantum point thin film can be transmitted by graphene, and the carrier transmitting performance of a photosensitive layer quantum point is improved; meanwhile, the photoelectric detector is arranged on the light-transmitting graphene thin film, based on the light-transmitting and flexible substrate, the light transmittance is increased, and thus the photoelectric detectorhas flexibility, bending performance and a weaving capability.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a photodetector, a manufacturing method thereof, and a photodetector fabric. Background technique [0002] In recent years, the vigorous development of wearable electronic devices has promoted technological progress in many fields, such as display, sensors, energy harvesting and storage, and the lightness, flexibility and bendability of wearable devices have attracted widespread attention. Among them, photodetectors, as representative sensors, have important applications in medical treatment, detection, military and other fields, but traditional photodetectors are mostly block-shaped and hard plate-shaped devices, which are difficult to fit irregular substrates according to application requirements, and do not have Flexible and bendable, these problems severely limit its development in wearable devices and other related fields. In addition, photodetectors sensitive to ...

AI Technical Summary

Problems solved by technology

Among them, photodetectors, as representative sensors, have important applications in medical treatment, detection, military and other fields, but traditional photodetectors are mostly block-shaped and hard plate-shaped devices, which are difficult to fit irregular substrates according to application requirements, and do not have Flexible and bendable characteristics, these problems severely limit its development in wearable devices and other related fields

In addition, photodetectors sensitive to near-infrared or infrared still have problems such as serious loss of detection light signal, single frequency band of detection light wave, low sensitivity and insufficient flexibility of devices.

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