A kind of diamond wire silicon chip cutting method

Abstract

The invention provides a diamond wire silicon slice cutting method, and belongs to the field of silicon slice cutting. The diamond wire silicon slice cutting method comprises the following steps thata silicon bar is adjusted to a preset position and fastened; a guide wheel is made to drive a wire mesh to idle till the tension value of the wire mesh is consistent with the designated tension value;a cutting parameter is set, and the silicon bar is made to go close to the wire mesh and is cut by the wire mesh; and the cut silicon bar is taken out, and the steps are repeated. The diamond wire silicon slice cutting method is simple and easy to operate, the tension of the wire mesh is adjusted through the wire mesh idling step before cutting, and thus, diamond wires are uniform in tension; andthe cut silicon slice quality is good, raw materials are saved, the machining cost is reduced, and the working efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of silicon chip cutting, and more specifically relates to a silicon chip cutting method with a gold wire. Background technique [0002] At present, gold steel wire cutting uses modified machines and special machines to cut polysilicon wafers with electroplated gold steel wires. The wires are reciprocating. The appearance of uneven thickness of silicon wafers and TTV (Total Thickness Variance, the method of detecting the thickness consistency of silicon wafers refers to the difference between the maximum and minimum thickness of silicon wafers), especially some small and medium-sized The quality of the silicon wafers cut by the equipment is poor, the saw mark value, TTV value, etc. are large, the tension of the wire mesh is uneven, and the wire consumption is high, resulting in a high cost per chip. Contents of the invention [0003] The object of the present invention is to provide a method for cutting si...

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Problems solved by technology

[0003] The object of the present invention is to provide a method for cutting silicon wafers with diamond wires to solve the problems in the prior art that the cutting of silicon wafers is a reciprocating wire, the tension of the wire mesh is uneven and the tension is low, the wire consumption is high, and the tension during cutting is high. Uneven silicon wafer thickness unevenness and TTV wafer, technical problems of high production cost

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