Check patentability & draft patents in minutes with Patsnap Eureka AI!

Cutting method and silicon wafer

A cutting method and slicing technology, applied in stone processing equipment, photovoltaic power generation, electrical components, etc., can solve problems such as tension fluctuations and high wire breakage rates

Pending Publication Date: 2021-12-24
LONGI GREEN ENERGY TECH CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of cutting silicon rods into silicon wafers, the tension of the cutting wire tends to fluctuate, which leads to a high rate of wire breakage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cutting method and silicon wafer
  • Cutting method and silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same or similar items with basically the same function and effect. Those skilled in the art can understand that words such as "first" and "second" do not limit the number and execution order, and words such as "first" and "second" do not necessarily limit the difference.

[0027] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right" etc. are based on those shown in the accompanying drawings. Orientation or positional relationship is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constru...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a cutting method and a silicon wafer, and relates to the technical field of photovoltaics. The cutting method and the silicon wafer are used for reducing the wire breakage rate in the cutting process. The cutting method is used for silicon rod slicing and comprises the following steps: providing a supporting device; arranging a connected pre-laid wire net on the supporting device, wherein the pre-laid wire net comprises a plurality of parallel wire segments, the pre-laid wire net comprises a first wire net and a second wire net which are connected, the first wire net is located in a cutting area of a silicon rod, and the length of the second wire net is larger than or equal to the wire inlet amount in the cutting process; and cutting the silicon rod through the pre-laid wire net. The cutting method and the silicon wafer are used for manufacturing solar cells.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a cutting method and a silicon wafer. Background technique [0002] Photovoltaic power generation has become one of the main energy sources of green energy, and its related technologies are developing rapidly. Making silicon-based solar cells mainly includes making silicon rods, making silicon wafers, and using silicon wafers to make solar cells. Wherein, making a silicon wafer refers to cutting a round silicon rod into a square silicon rod, and then slicing the square silicon rod to obtain a silicon wafer. [0003] Currently, silicon rods are cut into silicon wafers, usually using diamond wires. During the process of cutting silicon rods into silicon wafers, the tension of the cutting wire tends to fluctuate, which leads to a high rate of wire breakage. Contents of the invention [0004] The object of the present invention is to provide a cutting method and a silicon ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/00H01L31/04H01L31/18
CPCB28D5/045B28D5/0064B28D5/0058H01L31/04H01L31/1804Y02E10/547Y02P70/50
Inventor 管辉成路迪大明毛剑波刘晓东杨浩贾勇杰
Owner LONGI GREEN ENERGY TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com