Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal film measurement device and measurement method based on surface plasmon resonance

A surface plasmon and measurement method technology, applied in the field of ion resonance metal film measurement devices, can solve the problems of difficult to accurately control the thickness of the air gap, poor repeatability, affecting the characterization accuracy of the optical constants of the metal film, etc., and achieve precise control of the dielectric layer. The effect of thickness, small error and large application potential

Active Publication Date: 2021-02-02
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the Otto structure, the thickness of the air gap is difficult to accurately control, so the thickness of the air gap needs to be fitted during the fitting process, and the repeatability of the measurement results of this structure is poor, which affects the characterization accuracy of the optical constants of the metal film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal film measurement device and measurement method based on surface plasmon resonance
  • Metal film measurement device and measurement method based on surface plasmon resonance
  • Metal film measurement device and measurement method based on surface plasmon resonance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0033] see figure 1 , figure 1 It is a structural schematic diagram of the metal film measuring device based on surface plasmon resonance of the present invention. As can be seen from the figure, the present invention includes an isosceles right-angled prism 2, and the bottom surface of the isosceles right-angled prism 2 is successively coated with a dielectric film 3 and a metal film layer 4 with a submicron order thickness, and immersed in the solution 5 .

[0034] The optical path is: the light beam emitted by the ellipsometer emitting arm 1 is incident on the right-angled surface of the isosceles right-angled prism 2, when the incident light is incident on the interface between the bottom surface of the isosceles right-angled prism 2 and the dielectric film 3 with a t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a surface film plasmon resonance-based metal film measuring device. The device comprises an isosceles right-angle prism. The bottom surface of the isosceles right-angle prism is orderly coated with a submicron-thickness dielectric film and a metal film to be tested and then the isosceles right-angle prism is immersed in a solution. Through rotation of a launch arm of an ellipsometer by a certain angle, the angle of incident lights to the interface between the isosceles right-angle prism and the dielectric film is greater than the total reflection critical angle of the interface, the excited surface plasmon resonance conditions are satisfied and the plasmon resonance on the excited surface of the metal film to be detected is realized. The light amplitude ratios Psi and phase difference Delta corresponding to different wavelengths are measured, the relation curve between the amplitude ratios Psi and phase difference Delta, and the incident wavelengths is fitted, and the thickness and the optical constant of the metal film to be detected is calculated through inversion. The device has the advantages of adjustability of resonance center wavelength, wide detection range of metal film thickness and few fitting parameters and has a large application potential in the field of accurate characterization of the optical constant of the ultrathin film and the detection of biochemical substance composition.

Description

technical field [0001] The invention relates to a metal film measurement technology, in particular to a metal film measurement device and a measurement method based on surface plasmon resonance. Background technique [0002] Surface plasmon resonance technique can be used to measure the optical constants of metal thin films. Currently, there are Kretschmann structure and Otto structure commonly used to excite surface plasmon resonance, but these two structures are limited in practical applications because of their own shortcomings. In the Kretschmann structure, the metal film to be tested is coated on the bottom of the right-angle prism, and the incident light is incident on one right-angle surface of the right-angle prism, and exits from the other right-angle surface of the prism after being reflected by the bottom surface of the prism. However, in the Kretschmann structure, the thickness range of the metal film to be tested is limited, and the center wavelength correspond...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/552
CPCG01N21/554
Inventor 胡国行单尧罗阳贺洪波赵元安邵建达
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products