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Mount structure

A technology of structure and crystal structure, which is applied in the manufacture of electrical solid devices, semiconductor devices, semiconductor/solid devices, etc., can solve the problems of large thermal stress, cracks, large joint area, etc., and suppress the occurrence and development of cracks , the effect of large thermal stress

Pending Publication Date: 2018-06-15
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that cracks tend to develop due to large thermal stress due to the large bonding area

Method used

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Effect test

Embodiment

[0054] In order to confirm the effect of the present invention, regarding the above-mentioned embodiment, a 10mm 2 、15mm 2 The large-area bonded installation structure is verified. Here, as the first member 101, a 15mm steel plate with Ni plating on the back as the first material to be joined 102 is used. 2 Si chips. In addition, as the second member 103 , a Cu plate having Ni plating as the second material to be joined 104 on the back was used. The installation structure is manufactured according to the following steps.

[0055] First, flux is applied to a Cu plate as the second member 103, and a foil of a solder material forming the bonding material layer 109 is supplied thereon. In addition, flux is applied to the foil of the solder material, and the Si chip as the first member 101 is mounted thereon. It is heated to 280°C to melt the solder material. In the melted state, pressing is performed by applying a downward force from above the Si chip, and the layer thicknes...

Embodiment 3

[0062] The Ag contained in the solder materials of Example 3 and Comparative Example 2 was equal to the Ag content of the second intermetallic compound 110. 3 Sn exists in the form of Sn and is dispersed in the bonding material layer 109 .

[0063] On the other hand, in Comparative Examples 1 and 2, the content of Cu was small, so the (Cu, Ni) of the first intermetallic compound 107 6 sn 5 Less, unable to confirm occlusion. In addition, in Comparative Example 3, the content of Ag is large, so Ag 3 A large amount of Sn exists in the form of the second intermetallic compound 110 to form a closed structure.

[0064] In addition, elements other than Cu and Ni contained in the welding materials of Examples 4 to 7 do not exist in the form of the first intermetallic compound 107, and In and Bi are solid-dissolved in the stress relaxation material 108, and Co and Ge are trace amounts. Although not observed, it is considered to be contained in any one of the first interface layer 1...

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Abstract

The present invention provides a mount structure that withstands large thermal stress caused by a large joint area and suppresses occurrence and development of cracks caused by repeated temperature changes. The mount structure includes two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer at the interfaces with the two members. The bonding material layer contains a first intermetallic compound and a stress relaxation material. The first intermetallic compound has a spherical, a columnar, or an oval spherical shape, and the same crystalline structure as the first interface layer and the second interface layer, and partly closes the space between the first interface layer and the second interface layer. The stressrelaxation material contains tin as a main component, and fills around the first intermetallic compound.

Description

technical field [0001] The present invention relates to a mounting structure having a structure in which two members are joined by metal materials, which can be used for devices such as power devices. Background technique [0002] In devices that generate heat, such as power devices and LEDs, for the purpose of dissipating generated heat, a mounting structure in which a substrate and a heat dissipation portion are bonded for heat transfer from a substrate on which components are mounted to the heat dissipation portion is used. [0003] In recent years, in devices such as power devices, the amount of heat generated has also increased along with the increase in output. Therefore, more efficient heat dissipation is required in these devices. At present, in order to efficiently dissipate heat, increasing the area of ​​the joint portion between the members of the above-mentioned mounting structure is pursued. This is because, by enlarging the area, the paths through which heat ...

Claims

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Application Information

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IPC IPC(8): H01L23/488
CPCH01L24/29H01L2224/29311H01L2224/29147H01L2224/29155H01L2924/013B23K35/26B23K35/0233B23K35/262C22C13/00H01L2224/04026H01L2924/10253H01L2224/83455H01L2924/351H01L2924/3512H01L2224/32225H01L2224/05655H01L2224/32503H01L2224/32507H01L2224/83011H01L2224/83024H01L2224/83204H01L2224/83098H01L2224/83097H01L24/32H01L24/83H01L2224/29111H01L2224/05647H01L2924/014H01L2924/01029H01L2924/01028H01L2924/01032H01L2924/01083H01L2924/01027H01L2924/01047H01L2924/00014H01L2924/01049H01L2224/29083H01L2224/29247H01L2224/29255H01L2224/29209H01L2224/29213H01L2224/29257H01L2224/29217H01L2224/29239H01L2224/29211H01L23/488H01L23/00H01L21/52
Inventor 日根清裕古泽彰男北浦秀敏酒井一树
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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