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A technology of structure and crystal structure, which is applied in the manufacture of electrical solid devices, semiconductor devices, semiconductor/solid devices, etc., can solve the problems of large thermal stress, cracks, large joint area, etc., and suppress the occurrence and development of cracks , the effect of large thermal stress
Pending Publication Date: 2018-06-15
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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Therefore, there is a problem that cracks tend to develop
Method used
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[0053] Example
[0054] In order to confirm the effect of the present invention, regarding the above-mentioned embodiment, the 2 , 15mm 2 The large-area joint mounting structure is verified. Here, as the first member 101, a 15 mm plate with Ni plating as the first material 102 to be joined was used. 2 Si chip. In addition, as the second member 103, a Ni-plated Cu plate having the second material 104 to be joined on the back surface was used. The installation structure is made according to the following steps.
[0055] First, a flux is applied to the Cu plate as the second member 103, and a foil of solder material forming the bonding material layer 109 is supplied thereon. In addition, a flux is applied on the foil of the solder material, and the Si chip as the first member 101 is mounted thereon. Heat it to 280°C to melt the welding material. In the molten state, pressing is performed by applying downward force from above the Si chip, and the layer thickness between the bonded ...
Example Embodiment
[0062] The Ag contained in the soldering materials of Example 3 and Comparative Example 2 is the Ag of the second intermetallic compound 110 3 Sn exists in the form and is dispersed in the bonding material layer 109.
[0063] On the other hand, in Comparative Examples 1 and 2, the Cu content is small, so the (Cu, Ni) of the first intermetallic compound 107 6 Sn 5 Occlusion cannot be confirmed. In addition, in Comparative Example 3, the Ag content is large, so Ag 3 Sn is abundantly present in the form of the second intermetallic compound 110, forming a occlusion structure.
[0064] In addition, the soldering materials of Examples 4 to 7 contain no other elements except Cu and Ni in the form of the first intermetallic compound 107, In and Bi are dissolved in the stress reliever 108, and Co and Ge are trace amounts. It is not observed, but it is considered to be contained in any one of the first interface layer 105, the second interface layer 106, and the stress reliever 108.
[0065] ...
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Abstract
The present invention provides a mount structure that withstands large thermal stress caused by a large joint area and suppresses occurrence and development of cracks caused by repeated temperature changes. The mount structure includes two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer at the interfaces with the two members. The bonding material layer contains a first intermetallic compound and a stress relaxation material. The first intermetallic compound has a spherical, a columnar, or an oval spherical shape, and the same crystalline structure as the first interface layer and the second interface layer, and partly closes the space between the first interface layer and the second interface layer. The stressrelaxation material contains tin as a main component, and fills around the first intermetallic compound.
Description
technical field [0001] The present invention relates to a mounting structure having a structure in which two members are joined by metal materials, which can be used for devices such as power devices. Background technique [0002] In devices that generate heat, such as power devices and LEDs, for the purpose of dissipating generated heat, a mounting structure in which a substrate and a heat dissipation portion are bonded for heat transfer from a substrate on which components are mounted to the heat dissipation portion is used. [0003] In recent years, in devices such as power devices, the amount of heat generated has also increased along with the increase in output. Therefore, more efficient heat dissipation is required in these devices. At present, in order to efficiently dissipate heat, increasing the area of the joint portion between the members of the above-mentioned mounting structure is pursued. This is because, by enlarging the area, the paths through which heat ...
Claims
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