Method for testing hot spot temperature of half-chip photovoltaic module

A technology of hot spot temperature and testing method, which is applied in the field of hot spot testing of half-cell photovoltaic modules, can solve the problem that the hot spot testing method is no longer applicable, and achieve the effect of convenient evaluation and improved reliability

Active Publication Date: 2018-06-19
CSI CELLS CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, due to the change of the original circuit connection method of the ha

Method used

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  • Method for testing hot spot temperature of half-chip photovoltaic module
  • Method for testing hot spot temperature of half-chip photovoltaic module
  • Method for testing hot spot temperature of half-chip photovoltaic module

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Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0037] see figure 1 As shown, the present invention provides a method for testing the hot spot temperature of a half-chip photovoltaic module, which mainly includes the following steps:

[0038] S1. Determine the cell with the largest leakage in the half-cell photovoltaic module;

[0039] S2. Group the battery strings in the half-cut photovoltaic module, and cover the cells with the largest leakage in each battery string in proportion, so as to determine the worst covering area of ​​the half-cut photovoltaic module;

[0040] S3. Select a hot spot on each selected cell with the largest leakage, cover the non-hot spot area with the worst covering area, and stick a thermocouple on the hot spot and non-hot spot area of ​​each cell with the largest le...

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Abstract

The invention provides a method for testing the hot spot temperature of a half-chip photovoltaic module. The method comprises the steps of S1, selecting a chip: determining battery pieces with the maximum electric leakage in the half-chip photovoltaic module; S2, selecting area: determining the worst covering area of the half-chip photovoltaic module; S3, selecting the hot spot: selecting the hotspot on each of the battery piece with the maximum electric leakage, and covering the non-hot spot area with the worst cover area; S4, exposure: connecting the positive and negative terminals of the half-chip photovoltaic module in a short-circuit manner, and putting the half-chip photovoltaic module into a steady state simulation box to exposure to determine the hot spot temperature of the half-piece photovoltaic module. The method for testing the hot spot temperature of a half-chip photovoltaic module can not only determine the worst cover area of the half-chip photovoltaic module, but alsocan quickly and easily analyze the hot spot temperature of the half-chip photovoltaic module, provides a basis for the hot spot analysis of the half-chip photovoltaic module, and facilitates the assessment of hot spot risk to improve the reliability of half-chip photovoltaic modules.

Description

technical field [0001] The invention relates to a method for testing a hot spot of a half-chip photovoltaic module, belonging to the technical field of photovoltaic power generation. Background technique [0002] Due to the rapid growth of photovoltaic module market demand, power station investors have higher and higher requirements for the efficiency and power of photovoltaic modules. Conventional photovoltaic modules are gradually withdrawing from the competitive market, and half-cell photovoltaic modules, as a high-power photovoltaic Modules have begun to be widely used and researched; the existing half-cell photovoltaic modules are usually cut into two halves by laser scribing, and the half-cut cells are connected in series, and then connected in parallel It is made into a half-cut photovoltaic module, so the half-cut photovoltaic module can effectively reduce the current mismatch of the cells in the module, and the current loss within the module itself is reduced, so th...

Claims

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Application Information

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IPC IPC(8): G01K7/02G01J5/00
CPCG01J5/0066G01K7/02
Inventor 邓士锋董经兵夏正月闫新春许涛邢国强
Owner CSI CELLS CO LTD
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