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Thyristor with semiconductor body

A technology of semiconductors and thyristors, applied in the direction of thyristors, semiconductor devices, electrical components, etc., to achieve the effect of reducing electric field intensity

Active Publication Date: 2022-04-08
SEMIKRON ELECTRONICS GMBH & CO KG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the fabrication of field rings requires effort in the manufacture of thyristors since the field rings must be fabricated in the semiconductor body by a suitable doping process

Method used

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  • Thyristor with semiconductor body

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Experimental program
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Effect test

Embodiment Construction

[0031] figure 1 shows a cross-sectional view of a design of a thyristor 1 according to the invention, and figure 2 shows a top plan view of a thyristor 1 with figure 1 Compared to Thyristor 1 in figure 2 is shown on a reduced scale, and the polyimide layer 23 of the thyristor 1 is not shown.

[0032] The thyristor 1 according to the invention has a semiconductor body 2 with a first semiconductor body main side 3, a second semiconductor body main side 4 arranged opposite to the first semiconductor body main side 3, and a second semiconductor body surrounding the semiconductor body 2 and connected to the first The semiconductor body edge 28 of the first and second semiconductor body main sides 3 and 4 . The semiconductor material of the semiconductor body 2 preferably consists of silicon or silicon carbide.

[0033] The semiconductor body 2 has a first semiconductor region 5 of a first conductivity type, wherein a first outer surface 10 of the first semiconductor region 5 ...

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Abstract

The invention relates to a thyristor having a semiconductor body, the thyristor having a first semiconductor body main side, a second semiconductor body main side and a semiconductor body edge surrounding the semiconductor body and connecting the first and second semiconductor body main sides, the semiconductor body having: The first semiconductor region, the first semiconductor region extends in the edge region of the semiconductor body up to the main side of the second semiconductor body, the second outer surface of the first semiconductor region forms the edge of the semiconductor body, the third part of the first semiconductor region adjoining the edge of the semiconductor body The outer surface forms a first surface region of the main side of the second semiconductor body; a second semiconductor region arranged on the first semiconductor region and not extending to the edge of the semiconductor body; a third semiconductor region arranged on the second semiconductor region and arranged on the A fourth semiconductor region of the third semiconductor region; emerges from the first surface of the main side of the second semiconductor body and extends parallel to the edge of the semiconductor body and reaches a recess of the second semiconductor region.

Description

technical field [0001] The invention relates to a thyristor with a semiconductor body. Background technique [0002] Especially in the case of thyristors, it is often necessary to reduce the electric field strength generated in the edge region of the semiconductor body of the thyristor in order to prevent electrical breakdown. [0003] DE3832709A1 discloses a thyristor with a semiconductor body, which has a first semiconductor body main side, a second semiconductor body main side arranged opposite to the first semiconductor body main side, and a semiconductor body surrounding and connecting the first semiconductor body main side and the second semiconductor body main side. The semiconductor body edge of the main side of the semiconductor body, wherein the semiconductor body has a p-doped first semiconductor region, wherein the outer surface of the first semiconductor region forms the first semiconductor body main side, wherein the first semiconductor region is at the edge of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/74
CPCH01L29/0607H01L29/74H01L29/0615H01L29/0619H01L29/0661
Inventor 伯恩哈德·柯尼希保罗·施特罗贝尔
Owner SEMIKRON ELECTRONICS GMBH & CO KG
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