Semiconductor device and formation method thereof

Abstract

The invention relates to a semiconductor device and a formation method thereof. The method includes the following steps that: a substrate is provided, wherein the substrate comprises a core region andan edge region, wherein the substrate is provided with a first gate structure at the core region and is provided with a second gate structure at the edge region; source / drain doped layers are formedin the core edge of the substrate at two sides of the first gate structure and in the edge region of the substrate at two sides of the second gate structure respectively, and first ions are arranged in the source / drain doped layers; and the source / drain doped layers at the edge region are doped with second ions, and the conductivity type of the second ions is opposite to the conductivity type of the first ions. With the method adopted, the process of the semiconductor device can be simplified.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, a source region located in the semiconductor substrate on one side of the gate structure, and a drain region located in the semiconductor substrate on the other side of the gate structure. The working principle of the MOS transistor is: by applying a voltage to the gate structure, the current through the channel at the bottom of the gate structure is adjusted to generate a switching signal. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resultin...

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Problems solved by technology

[0004] However, whether it is a planar MOS transistor or a semiconductor device composed of a fin field effect transistor, the process is relatively complicated.

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